Band gap engineering of GaN nanowires by surface functionalization

Applied Physics Letters

Volumn 94, Issue 7, 2009, Pages

  Fang, D Q ^a,b,c   Rosa, A L ^c   Frauenheim, Th ^c   Zhang, R Q ^a,d  

^a TECHNICAL INSTITUTE OF PHYSICS AND CHEMISTRY   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c UNIVERSITY OF BREMEN   (Germany)

^d CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; DENSITY FUNCTIONAL THEORY; ELECTRIC WIRE; ELECTRONIC PROPERTIES; ENERGY GAP; FUNCTIONAL GROUPS; GALLIUM ALLOYS; GALLIUM NITRIDE; NANOWIRES; OPTICAL PROPERTIES; PASSIVATION; SEMICONDUCTING GALLIUM;

ADSORPTION SITES; BAND GAPS; BAND-GAP ENGINEERINGS; COVERAGE RATIOS; DENSITY-FUNCTIONAL THEORIES; FUNCTIONALIZATION; FUNCTIONALIZED; GALLIUM NITRIDE NANOWIRES; GAN NANOWIRES; PARTIAL SURFACES; SURFACE FUNCTIONALIZATION; SURFACE STATE;

SURFACE PROPERTIES;

EID: 60749100744     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3086316     Document Type: Article

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