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Volumn 128, Issue 28, 2006, Pages 8990-8991

Electrical characteristics and chemical stability of non-oxidized, methyl-terminated silicon nanowires

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; SILICON;

EID: 33746050921     PISSN: 00027863     EISSN: None     Source Type: Journal    
DOI: 10.1021/ja056785w     Document Type: Article
Times cited : (135)

References (16)
  • 7
    • 33746094782 scopus 로고    scopus 로고
    • note
    • For our devices, a gate voltage swing between -2 and +2 V is equivalent to a swing in the applied electric field of between 4 and 8 V/μm (at a source-drain bias of 0.1 V).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.