First-principles study of sulfur passivation of GaP(001) surface at one-monolayer coverage

Journal of Optoelectronics and Advanced Materials

Volumn 10, Issue 10, 2008, Pages 2732-2737

  Li, D F ^a,b   Xiao, H Y ^a   Zu, X T ^a   Liu, K Z ^c  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b CHONGQING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^c RESEARCH CENTER OF LASER FUSION   (China)

Author keywords

Density functional theory; Density of states; Energy band structure; GaP; Passivation effect

Indexed keywords

BAND STRUCTURE; DANGLING BONDS; ELECTRONIC PROPERTIES; GALLIUM PHOSPHIDE; III-V SEMICONDUCTORS; MONOLAYERS; PASSIVATION; SULFUR; SURFACE RESISTANCE;

ANTI-BONDING STATE; DENSITY OF STATE; FIRST-PRINCIPLES STUDY; MONOLAYER COVERAGE; PASSIVATION EFFECT; STRUCTURAL AND ELECTRONIC PROPERTIES; SULFUR PASSIVATION; TOTAL ENERGY METHODS;

DENSITY FUNCTIONAL THEORY;

EID: 55349102683     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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