Stable scaffolds for reacting Si nanowires with further organic functionalities while preserving Si-C passivation of surface sites

Journal of the American Chemical Society

Volumn 130, Issue 52, 2008, Pages 17670-17671

  Assad, Ossama ^a   Puniredd, Sreenivasa Reddy ^a   Stelzner, Thomas ^b   Christiansen, Silke ^b   Haick, Hossam ^a,c  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b LEIBNIZ INSTITUTE OF PHOTONIC TECHNOLOGY   (Germany)

^c MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOP SITES; FUNCTIONALIZATION; ORGANIC FUNCTIONALITIES; SI NANOWIRE; SI-C BOND; SURFACE SITES;

ELECTRIC WIRE; PASSIVATION; SCAFFOLDS; SILICON CARBIDE;

SILICON;

CARBON; METHYL GROUP; NANOWIRE; SILICON;

CHEMICAL BOND; CONTROLLED STUDY; SHORT SURVEY; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 67749135593     PISSN: 00027863     EISSN: None     Source Type: Journal    
DOI: 10.1021/ja807888k     Document Type: Short Survey

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