Molecularly controlled metal-semiconductor junctions on silicon surface: A dipole effect

Langmuir

Volumn 24, Issue 19, 2008, Pages 11300-11306

  Hiremath, R K ^a   Rabinal, M K ^a   Mulimani, B G ^a,b   Khazi, I M ^a  

^a KARNATAK UNIVERSITY   (India)

^b GULBARGA UNIVERSITY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

BENZENE; ELECTRIC CONDUCTIVITY; ELECTRIC DIPOLE MOMENTS; MERCURY (METAL); MOLECULAR ELECTRONICS; MOLECULES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SENSOR NETWORKS; SILICON; SOLAR ENERGY;

BARRIER HEIGHTS; BIOLOGICAL SENSORS; COVALENT ATTACHMENTS; DENSITY OF INTERFACE STATES; DIPOLE EFFECTS; ELECTRICAL CHARGES; ETHYNYLBENZENE; IDEALITY FACTORS; ORGANIC MOLECULES; POTENTIAL APPLICATIONS; SILICON JUNCTIONS; SILICON SURFACES; SURFACE BAND BENDING; SURFACE PHOTOVOLTAGE; SYSTEMATIC CHANGES;

SEMICONDUCTOR JUNCTIONS;

EID: 54549121483     PISSN: 07437463     EISSN: None     Source Type: Journal    
DOI: 10.1021/la800882e     Document Type: Article

References (53)

1. Sze, S. M. Physics of Semiconductor Devices, 2nd ed.; Wiley-Interscience: Hoboken, NJ, 2005.
2. Rhoderick, E. H.; Williams, R. H. Metal-Semiconductor Contacts, 2nd ed.; Clarendron Press: Oxford, 1988.
3. (a) Monch, W. Semiconductor Surfaces and Interfaces; Springer: Berlin, 1995.
4. (b) Luth, H. Surfaces and Interfaces of Solid Materials; Springer: Berlin, 1998.
5. Selzer, Y.; Solomon, A.; Cahen, D. J. Am. Chem. Soc. 2002, 124, 2886-2887.
6. Selzer, Y.; Solomon, A.; Cahen, D. J. Phys. Chem. B 2002, 106, 10432-10439.
7. Ashkenasy, G.; Cahen, D.; Cohen, R.; Shanzer, A.; Vilan, A. Acc. Chem. Res. 2002, 35, 121-128.
8. Wu, D. G.; Ghabboun, J.; Martin, J. M. L.; Cahen, D. J. Phys. Chem. B 2001, 105, 12011-12018.
9. Faber, E. J.; de Smet, L. C. P. M.; Olthuis, W.; Zuilhof, H.; Sudholter, E. J. R.; van den Berg, A. ChemPhysChem 2005, 6, 2153-2166.
10. Zhao, J.; Uosaki, K. Appl. Phys. Lett. 2003, 183, 2034-2036.
11. Ishii, H.; Sugiyama, K.; Ito, E.; Seki, K. Adv. Mater. 1999, 11, 605-625.
12. Vilan, A.; Shanzer, A.; Cahen, D. Nature 2000, 404, 166-168.
13. Hunger, R.; Jaegermann, W.; Merson, A.; Shapira, Y.; Pettenkofer, C.; Rappich, J. J. Phys. Chem. B 2006, 110, 15432-15441.
14. Vilan, A.; Ghabboun, J.; Cahen, D. J. Phys. Chem. B 2002, 107, 6360-6376.
15. Boukheiroub, R.; Wayner, D. D. M. J. Am. Chem. Soc. 1999, 121, 11513-11515.
16. Cohen, R.; Kronik, L.; Vilan, A.; Shanzer, A.; Cahen, D. Adv. Mater. 2000, 12, 33-37.
17. Buriak, J. M. Chem. Rev. 2002, 102, 1271-1380.
18. Rabinal, M. K.; Mulimani, B. G. New J. Phys. 2007, 9, 1-8.
19. (a) Hacker, C. A.; Hamers, R. J. J. Phys. Chem. B 2003, 107, 7689.
20. (b) Hung, L. S.; Chen, C. H. Mater. Sci. Eng., R 2002, 39, 143-222.
21. Tao, F.; Wang, Z. H.; Lai, Y. H.; Xu, G. O. J. Am. Chem. Soc. 2003, 125, 6687-6696.
22. (a) Brook, M. A. Silicon in Organic, Organometallic and Polymer Chemistry; Wiley: New York, 2000.
23. (b) The Chemistry of Organic Silicon Compounds; Patai, S., Rappoport, Z., Eds.; Wiley & Sons: New York, 1989.
24. Saito, N.; Hayashi, K.; Sugimura, H.; Takai, O. Langmuir 2003, 19, 10632-10634.
25. Hiremath, R. K.; Mulimani, B. G.; Rabinal, M. K.; Khazi, I. M. J. Phys: Condens. Matter 2007, 19, 1-12.
26. Yamada, T.; Takano, N.; Yamada, K.; Yoshitomi, S.; Inoue, T.; Osaka, T. Mater. Phys. Mech. 2001, 4, 67-70.
27. Stewart, M. P.; Buriak, J. M. Adv. Mater. 2000, 12, 859-869.
28. Meyer zu Heringdorf, F.-J.; Reuter, M. C.; Tromp, R. M. Nature 2001, 412, 517-520.
29. Hamers, R. J. Nature 2001, 412, 489-490.
30. Haick, H.; Hurley, P. T.; Hochbaum, A. I.; Yang, P.; Lewis, N. S. J. Am. Chem. Soc. 2006, 128, 8990-8991.
31. Boukherroub, R.; Morin, S.; Bensebaa, F.; Wayner, D. D. M. Langmuir 1999, 15, 3831-3835.
32. Effenberger, F.; Gotz, G.; Bidlingmaier, B.; Wezstein, M. Angew. Chem., Int. Ed. 1998, 37, 2462-2464.
33. Stewart, M. P.; Buriak, J. M. Angew. Chem., Int. Ed. 1998, 37, 3257-3260.
34. Cicero, R. L.; Linford, M. R.; Chidsey, C. E. D. Langmuir 2000, 16, 5688-5695.
35. Wallart, X.; de Villeneuve, C. H.; Allongue, P. J. Am. Chem. Soc. 2005, 127, 7871-7878.
36. Nauka, K.; Li, Z.; Kamins, T. I. Mater. Sci. 2005, 23, 653-661.
37. Schroder, D. K. Meas. Sci. Technol. 2001, 12, R16-R31.
38. Kronig, L.; Shapira, Y. Surf. Sci. Rep. 1999, 37, 1-206.
39. Votoček, L.; Toušek, J. In WDS 05, Proceedings of Contributed Papers: Part III; Proceedings of the 14th Annual Conference of Doctoral Students-WDS 2005, Prague, June 7-10, 2005; Safrankova, J., Ed.; Matfyzpress: Prague, 2005; pp 595-600.
40. Zehner, R. W.; Parsons, B. F.; Hsung, R. P.; Lawrence, S. S. Langmuir 1999, 15, 1121-1127.
41. (a)Crispin, X.; Geskin, V.;Crispin, A.; Cornil, J.;Lazzaroni, R.; Salaneck, W. R.; Brédas, J.-L. J. Am. Chem. Soc. 2002, 124, 8131-8141.
42. (b) Bagus, P. S.; Staemmler, V.; Wöll, C. Phys. Rev. Lett. 2002, 89, 096104.
43. Schwartz, J.; Bruner,E. L.; Koch, N.; Span, A. R.; Bernasek, S. L.; Kahn, A. Synth. Met. 2003, 138, 223-227.
44. Drummond, T. J. Phys. Rev. 1999, 59, 8182-8194.
45. Liu, Y. J.; Yu, H. Z. J. Phys. Chem. B 2003, 107, 7803-7811.
46. Chand, S.; Bala, S. Physica B 2007, 390, 179-184.
47. Holmlin, R. E.; Haag, R.; Chabinyc, M. L.; Ismagilov, R. F.; Cohen, A. E.; Terfort, A.; Rampi, M. A.; Whitesides, G. M. J. Am. Chem. Soc. 2001, 123, 5075-5085.
48. Majumdar, N.; Gergel, N.; Routenberg, D.; Bean, J. C.; Harriot, L. R.; Li, B.; Pu, L.; Yao, Y.; Tour, J. M. J. Vac. Sci. Technol. 2005, 23, 1417-1421.
49. Wang, W.; Lee, T.; Reed, M. A. Phys. Rev. B 2003, 68, 035416.
50. Sze, S. M. Physics of Semiconductor Devices, 2nd ed.; Wiley: New York, 2005; p 292.
51. Plummer, J. D.; Deal, M. D.; Griffin, P. B. Silicon VLSI Technology, Fundamentals, Practice and Modeling; Prentice Hall: New Jersey, 2000.
52. Yun, M.; Ravindran, R.; Hussain, M.; Gangopadhyay, S.; Scherf, U.; Bunnagel, T.; Gilbert, F.; Arif, M.; Guha, S. Appl. Phys. Lett. 2006, 89, 013506.
53. Zhao, N.; Marinov, O.; Botton, G. A.; Deen, M. J.; Ong, B. S.; Wu, Y.; Liu, P. IEEE Trans. Electron Devices 2005, 52, 2150.