Gate coupling and charge distribution in nanowire field effect transistors

Nano Letters

Volumn 7, Issue 9, 2007, Pages 2778-2783

  Khanal, D R ^a,b   Wu, J ^a,b  

^a No 1760

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC SPACE CHARGE; FIELD EFFECT TRANSISTORS; MATHEMATICAL MODELS; NUMERICAL METHODS; POISSON EQUATION; PROBLEM SOLVING;

GATE COUPLING; GATE OXIDES;

NANOWIRES;

NANOMATERIAL;

ARTICLE; CHEMISTRY; COMPUTER AIDED DESIGN; COMPUTER SIMULATION; ELECTRICITY; ELECTRON TRANSPORT; EQUIPMENT; EQUIPMENT DESIGN; INSTRUMENTATION; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; SEMICONDUCTOR; THEORETICAL MODEL; ULTRASTRUCTURE;

COMPUTER SIMULATION; COMPUTER-AIDED DESIGN; ELECTRON TRANSPORT; ELECTROSTATICS; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MATERIALS TESTING; MODELS, THEORETICAL; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; TRANSISTORS;

EID: 34948867371     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl071330l     Document Type: Article

References (23)

1. Li, Y.; Qian, F.; Xiang, J.; Lieber, C. M. Mater. Today 2006, 9, 18.
2. Thelander, C.; Agarwal, P.; Brongersma, S.; Eymery, J.; Feiner, L. F.; Forchel, A.; Scheffler, M.; Riess, W.; Ohlsson, B. J.; Gosele, U.; Samuelson, L. Mater. Today 2006, 9, 28.
3. Agarwal, R.; Lieber, C. M. Appl. Phys. A 2006, 55, 209.
4. Bryllert, T.; Wernersson, L. E.; Froberg, L. E.; Samuelson, L. IEEE Electron. Device Lett. 2006, 27, 323.
5. Xiang, J.; Lu, W.; Hu, Y. J.; Wu, Y.; Yan, H.; Lieber, C. M. Nature 2006, 441, 489
6. Huang, Y.; Lieber, C. M. Pure Appl. Chem. 2004, 76, 2051.
7. Friedman, R. S.; McAlpine, M. C.; Ricketts, D. S.; Ham, D.; Lieber, C. M. Nature 2005, 434, 1085.
8. Sze, S. Physics of Semiconductor Devices; Wiley: New York, 1981.
9. Ilani, S.; Donev, L. A. K.; Kindermann, M.; McEuen, P. L. Nat. Phys. 2006, 2, 687.
10. Tu, R.; Zhang, L.; Nishi, Y.; Dai, H. Nano Lett. 2007, 7, 1561.
11. Morse, P. M.; Feshbach, H. Methods of Theoretical Physics; McGraw-Hill; New York, 1953.
12. Lind, E.; Persson, A. I.; Samuelson, L.; Wernersson, L. E. Nano Lett. 2006, 6, 1842.
13. Lu, W.; Xiang, J.; Timko, B. P.; Wu, Y.; Lieber, C. M. Proc. Natl. Acad. Sci. U.S.A. 2005, 102, 10046.
14. Wang, D.; Wang, Q.; Javey, A.; Tu, R.; Dai, H.; Kim, H.; McIntyre, P. C.; Krishnamohan, T.; Saraswat, K. C. Appl. Phys. Lett. 2003, 55, 2432.
15. Cui, Y.; buan, X.; Hu, J.; Lieber, C. M. J. Phys. Chem. B 2000, 104 5213.
16. Wunnicke, O. Appl. Phys. Lett. 2006, 89, 83102.
17. Vashaee, D.; Shakouri, A.; Goldberger, J.; Kuykendall, T.; Pauzauskie, P.; Yang, P. J. Appl. Phys. 2006, 99, 54310.
18. Dattoli, E. N.; Wan, Q.; Guo, W.; Chen, Y.; Pan, X.; Lu, W. Nano Lett. 2007, 7, 2463-2469.
19. Li, Y.; Xiang, J.; Qian, F.; Gradecak, S.; Wu, Y.; Yan, H.; Blom, D. A.; Lieber, C. M. Nano Lett. 2006, 6, 1468.
20. Zheng, G.; Lu, W.; Jin, S.; Lieber, C. M. Adv. Mater. 2004, 16, 1890.
21. Yu, P. Y.; Cardona, M. Fundamentals of Semiconductors: Physics and Materials Properties; Springer-Verlag; New York, 1999.
22. Guo, J.; Wang, J.; Polizzi, E.; Datta, S.; Lundstrom, M. IEEE Trans. Nanotechnol. 2003, 2, 329.
23. Neophytou, N.; Guo, J.; Lundstrom, M. S. IEEE Trans. Nanotechnol. 2006, 5, 385.