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Volumn 7, Issue 9, 2007, Pages 2778-2783
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Gate coupling and charge distribution in nanowire field effect transistors
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRIC SPACE CHARGE;
FIELD EFFECT TRANSISTORS;
MATHEMATICAL MODELS;
NUMERICAL METHODS;
POISSON EQUATION;
PROBLEM SOLVING;
GATE COUPLING;
GATE OXIDES;
NANOWIRES;
NANOMATERIAL;
ARTICLE;
CHEMISTRY;
COMPUTER AIDED DESIGN;
COMPUTER SIMULATION;
ELECTRICITY;
ELECTRON TRANSPORT;
EQUIPMENT;
EQUIPMENT DESIGN;
INSTRUMENTATION;
MATERIALS TESTING;
METHODOLOGY;
NANOTECHNOLOGY;
PARTICLE SIZE;
SEMICONDUCTOR;
THEORETICAL MODEL;
ULTRASTRUCTURE;
COMPUTER SIMULATION;
COMPUTER-AIDED DESIGN;
ELECTRON TRANSPORT;
ELECTROSTATICS;
EQUIPMENT DESIGN;
EQUIPMENT FAILURE ANALYSIS;
MATERIALS TESTING;
MODELS, THEORETICAL;
NANOSTRUCTURES;
NANOTECHNOLOGY;
PARTICLE SIZE;
TRANSISTORS;
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EID: 34948867371
PISSN: 15306984
EISSN: None
Source Type: Journal
DOI: 10.1021/nl071330l Document Type: Article |
Times cited : (123)
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References (23)
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