Low-temperature STM images of methyl-terminated Si(111) surfaces

Journal of Physical Chemistry B

Volumn 109, Issue 2, 2005, Pages 671-674

  Yu, Hongbin ^a   Webb, Lauren J ^a   Ries, Ryan S ^a   Solares, Santiago D ^a   Goddard III, William A ^a   Heath, James R ^a   Lewis, Nathan S ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR MECHANICS; STRUCTURAL DEFECTS; STRUCTURAL PERFECTION; SURFACE STRUCTURES;

ALKYLATION; CHEMICAL BONDS; CHLORINATION; CRYSTAL ORIENTATION; CRYSTAL STRUCTURE; DOPING (ADDITIVES); ETCHING; ORGANIC COMPOUNDS; OXIDATION; PHOTOLUMINESCENCE; SCANNING TUNNELING MICROSCOPY; SURFACE REACTIONS; X RAY CRYSTALLOGRAPHY; X RAY PHOTOELECTRON SPECTROSCOPY;

SILICON;

HYDROCARBON; SILICON;

ARTICLE; CHEMISTRY; METHODOLOGY; PARTICLE SIZE; SCANNING TUNNELING MICROSCOPY; SENSITIVITY AND SPECIFICITY; SURFACE PROPERTY; TEMPERATURE;

HYDROCARBONS; MICROSCOPY, SCANNING TUNNELING; PARTICLE SIZE; SENSITIVITY AND SPECIFICITY; SILICON; SURFACE PROPERTIES; TEMPERATURE;

EID: 13244260970     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp047672m     Document Type: Article

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