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11344256148
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note
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0 is the permittivity of free space. While the relevant dipole moment is that of the molecule bound to the surface, this is not trivial to calculate. We used the dipole moment of the free molecule, assuming that this will reflect the changes within the series of molecules with identical binding groups.
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11344285059
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note
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-3) junctions, together with the fact that the same contacting procedure (ICICE) was used to contact the molecules on the heavily and lightly doped GaAs, indicate that the contacting does not significantly damage the molecules below the metal contact.
-
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32
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11344276940
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-
note
-
-1) for the different derivatives, and divided their magnitudes by each other. We calculated relative molecular densities for the different derivatives from the Kelvin-probe data by using the relation between ΔV and N, which was previously given [25]. The mea-sured electrical potential drops (AV) were divided by each other, assuming constant tilt angle (because the binding groups were the same), and dielectric constant. The relative molecule density was then extracted by correcting for differences in the dipole moments of the molecules.
-
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33
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11344294427
-
-
note
-
e values comparable to those of the original GaAs substrate. This shows that there was no effect of the Au contact and/or the molecules on the bulk doping density of the GaAs substrate.
-
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-
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35
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-
11344276100
-
-
note
-
Further details on such analysis will be given in a forthcoming paper.
-
-
-
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36
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11344261359
-
-
note
-
We define a negative dipole as one with its negative pole pointing towards the semiconductor substrate.
-
-
-
-
37
-
-
11344271139
-
-
note
-
pin values for junctions with either negative or positive molecular dipoles, did not exceed the upper and lower limits, respectively, which were derived from the C-V measurements.
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11344295755
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44
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11344277464
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-
note
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Based on Kelvin-probe measurements in ultra-high vacuum and on time-of-flight secondary ion mass spectroscopy (TOF SIMS) measurements, we found that the conditions used in ICICE had a negligible effect (<5 %) on the stability of the dC-X molecules adsorbed on GaAs (H. Haick, J. Ghabboun, M. Ambrico, T. Ligonzo, D. Cahen, unpublished).
-
-
-
-
45
-
-
11344294953
-
-
note
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Positive voltage means that the metal is positive with respect to the semiconductor.
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-
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