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Volumn 16, Issue 23-24, 2004, Pages 2145-2151

Discontinuous molecular films can control metal/semiconductor junctions

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; BINDING ENERGY; ELECTRIC POTENTIAL; ELECTRODES; ELECTROSTATICS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; METALS; MOLECULES; MONOLAYERS; OPTOELECTRONIC DEVICES; PHOTOEMISSION; SEMICONDUCTOR JUNCTIONS; SPECTROSCOPIC ANALYSIS; TRANSPORT PROPERTIES; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 11344290288     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/adma.200400923     Document Type: Article
Times cited : (49)

References (47)
  • 14
    • 3342986527 scopus 로고
    • R. T. Tung, Phys. Rev. B 1992, 45, 13 509; in our discussion we assume, for the sake of simplicity, circular domains.
    • (1992) Phys. Rev. B , vol.45 , pp. 13509
    • Tung, R.T.1
  • 26
    • 11344256148 scopus 로고    scopus 로고
    • note
    • 0 is the permittivity of free space. While the relevant dipole moment is that of the molecule bound to the surface, this is not trivial to calculate. We used the dipole moment of the free molecule, assuming that this will reflect the changes within the series of molecules with identical binding groups.
  • 29
    • 11344285059 scopus 로고    scopus 로고
    • note
    • -3) junctions, together with the fact that the same contacting procedure (ICICE) was used to contact the molecules on the heavily and lightly doped GaAs, indicate that the contacting does not significantly damage the molecules below the metal contact.
  • 32
    • 11344276940 scopus 로고    scopus 로고
    • note
    • -1) for the different derivatives, and divided their magnitudes by each other. We calculated relative molecular densities for the different derivatives from the Kelvin-probe data by using the relation between ΔV and N, which was previously given [25]. The mea-sured electrical potential drops (AV) were divided by each other, assuming constant tilt angle (because the binding groups were the same), and dielectric constant. The relative molecule density was then extracted by correcting for differences in the dipole moments of the molecules.
  • 33
    • 11344294427 scopus 로고    scopus 로고
    • note
    • e values comparable to those of the original GaAs substrate. This shows that there was no effect of the Au contact and/or the molecules on the bulk doping density of the GaAs substrate.
  • 35
    • 11344276100 scopus 로고    scopus 로고
    • note
    • Further details on such analysis will be given in a forthcoming paper.
  • 36
    • 11344261359 scopus 로고    scopus 로고
    • note
    • We define a negative dipole as one with its negative pole pointing towards the semiconductor substrate.
  • 37
    • 11344271139 scopus 로고    scopus 로고
    • note
    • pin values for junctions with either negative or positive molecular dipoles, did not exceed the upper and lower limits, respectively, which were derived from the C-V measurements.
  • 43
    • 11344295755 scopus 로고    scopus 로고
    • H. Haick, J. Ghabboun, H. Cohen, A. Vilan, J. Hwang, A. Wan, F. Amy, A. Kahn, D. Cahen, unpublished
    • H. Haick, J. Ghabboun, H. Cohen, A. Vilan, J. Hwang, A. Wan, F. Amy, A. Kahn, D. Cahen, unpublished.
  • 44
    • 11344277464 scopus 로고    scopus 로고
    • note
    • Based on Kelvin-probe measurements in ultra-high vacuum and on time-of-flight secondary ion mass spectroscopy (TOF SIMS) measurements, we found that the conditions used in ICICE had a negligible effect (<5 %) on the stability of the dC-X molecules adsorbed on GaAs (H. Haick, J. Ghabboun, M. Ambrico, T. Ligonzo, D. Cahen, unpublished).
  • 45
    • 11344294953 scopus 로고    scopus 로고
    • note
    • Positive voltage means that the metal is positive with respect to the semiconductor.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.