Interface traps distribution and temperature-dependent 6H-SiC MOSFET analysis

Semiconductor Science and Technology

Volumn 21, Issue 1, 2006, Pages 6-12

  Kaushik, Navneet ^a   Haldar, Subhasis ^b   Gupta, Mridula ^a   Gupta, R S ^a  

^a UNIVERSITY OF DELHI   (India)

^b UNIVERSITY OF DELHI   (India)

Author keywords

[No Author keywords available]

Indexed keywords

MATHEMATICAL MODELS; POISSON EQUATION; TEMPERATURE DISTRIBUTION; THRESHOLD VOLTAGE;

DOPANT IMPURITIES; TRAP DISTRIBUTION;

MOSFET DEVICES;

EID: 29144506069     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/1/002     Document Type: Article

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