On backscattering and mobility in nanoscale silicon MOSFETs

IEEE Transactions on Electron Devices

Volumn 56, Issue 11, 2009, Pages 2762-2769

  Jeong, Changwook ^a   Antoniadis, Dimitri A ^b   Lundstrom, Mark S ^a  

^a Purdue University   (United States)

^b Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

Backscattering coefficient; Mean free path; Mobility; MOSFETs

Indexed keywords

BACKSCATTERING COEFFICIENT; BALLISTIC LIMIT; CHANNEL MOBILITY; DC CURRENT; DRAIN BIAS; EFFECTIVE GATE LENGTH; EXPERIMENTAL UNCERTAINTY; MEAN FREE PATH; MOBILITY; MOSFETS; N-CHANNEL; NANO SCALE; ON-CURRENTS; SCATTERING THEORY; SILICON MOSFET; STRONG INVERSION;

BACKSCATTERING; BALLISTICS; DRAIN CURRENT; MOSFET DEVICES; SCATTERING PARAMETERS; SEMICONDUCTING SILICON COMPOUNDS; SOLID-STATE SENSORS; UNCERTAINTY ANALYSIS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 70350705826     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2030844     Document Type: Article

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