Experimental determination of the channel backscattering coefficient on 10-70 nm-metal-gate Double-Gate transistors

Solid-State Electronics

Volumn 51, Issue 4 SPEC. ISS., 2007, Pages 537-542

  Barral, Vincent ^a,b   Poiroux, T ^a   Vinet, M ^a   Widiez, J ^a   Previtali, B ^a   Grosgeorges, P ^a   Le Carval, G ^a   Barraud, S ^a   Autran, J L ^b   Munteanu, D ^b   Deleonibus, S ^a  

^a CEA LETI   (France)

^b AIX MARSEILLE UNIVERSITÉ   (France)

Author keywords

Access resistances; Backscattering coefficient; Carrier mean free path; Critical length; Double Gate MOSFET

Indexed keywords

BACKSCATTERING; COMPUTATION THEORY; THERMAL EFFECTS;

ACCESS RESISTANCES; BACKSCATTERING COEFFICIENT; CARRIER MEAN-FREE-PATH; CRITICAL LENGTH; DOUBLE-GATE MOSFET;

MOSFET DEVICES;

EID: 34047267112     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.02.016     Document Type: Article

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