Carrier backscattering characteristics of strained silicon-on-insulator n-MOSFETs featuring silicon-carbon source/drain regions

Solid-State Electronics

Volumn 51, Issue 11-12, 2007, Pages 1444-1449

  Ang, Kah Wee ^a   Chin, Hock Chun ^a   Chui, King Jien ^a   Li, Ming Fu ^a   Samudra, Ganesh S ^a   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Ballistic efficiency; Carrier backscattering; Injection velocity; Strain

Indexed keywords

BACKSCATTERING; CARBON; CARRIER TRANSPORT; SILICON ON INSULATOR TECHNOLOGY; TENSILE STRAIN; TRANSISTORS;

BALLISTIC EFFICIENCY; CARRIER BACKSCATTERING; DRIVE CURRENT PERFORMANCE; INJECTION VELOCITY;

SOLID STATE PHYSICS;

EID: 36248937179     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.09.013     Document Type: Article

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