메뉴 건너뛰기




Volumn 56, Issue 3, 2009, Pages 408-419

Experimental investigation on the quasi-ballistic transport: Part I - Determination of a new backscattering coefficient extraction methodology

Author keywords

Backscattering coefficient; Injection velocity; Inversion charge; SOI MOSFETs; Universal abaci

Indexed keywords

BALLISTICS; MATHEMATICAL INSTRUMENTS; MOSFET DEVICES;

EID: 62749142961     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2011681     Document Type: Article
Times cited : (40)

References (29)
  • 1
    • 34250650174 scopus 로고    scopus 로고
    • J. Lusakowski, M. J. Martin Martinez, R. Rengel, T. Gonzalez, R. Tauk, Y. M. Meziani, W. Knap, F. Boeuf, and T. Skotnicki, Quasiballistic transport in nanometer Si metal-oxide-semiconductor field-effect transistors: Experimental and Monte Carlo analysis, J. Appl. Phys. 101, no. 11, pp. 114 511-114 516, Jun. 2007.
    • J. Lusakowski, M. J. Martin Martinez, R. Rengel, T. Gonzalez, R. Tauk, Y. M. Meziani, W. Knap, F. Boeuf, and T. Skotnicki, "Quasiballistic transport in nanometer Si metal-oxide-semiconductor field-effect transistors: Experimental and Monte Carlo analysis," J. Appl. Phys. vol. 101, no. 11, pp. 114 511-114 516, Jun. 2007.
  • 2
    • 0036253371 scopus 로고    scopus 로고
    • Essential physics of carrier transport in nanoscale MOSFETs
    • Jan
    • M. Lundstrom and Z. Ren, "Essential physics of carrier transport in nanoscale MOSFETs," IEEE Trans. Electron Devices, vol. 49, no. 1, pp. 133-141, Jan. 2002.
    • (2002) IEEE Trans. Electron Devices , vol.49 , Issue.1 , pp. 133-141
    • Lundstrom, M.1    Ren, Z.2
  • 5
    • 34547891074 scopus 로고    scopus 로고
    • Characterizing the channel backscattering behavior in nanoscale strained complementary metal oxide semiconductor field-effect transistors
    • Nov
    • H.-N. Lin, H.-W. Chen, C.-H. Ko, C.-H. Ge, H.-C. Lin, T.-Y. Huang, and W.-C. Lee, "Characterizing the channel backscattering behavior in nanoscale strained complementary metal oxide semiconductor field-effect transistors," Jpn. J. Appl. Phys., vol. 45, no. 11, pp. 8611-8617, Nov. 2006.
    • (2006) Jpn. J. Appl. Phys , vol.45 , Issue.11 , pp. 8611-8617
    • Lin, H.-N.1    Chen, H.-W.2    Ko, C.-H.3    Ge, C.-H.4    Lin, H.-C.5    Huang, T.-Y.6    Lee, W.-C.7
  • 6
    • 43749115359 scopus 로고    scopus 로고
    • Saturation drain current analytical modeling of single gate fully depleted SOI or SON MOSFETs in the quasi ballistic regime of transport
    • Oct
    • M. Ferrier, R. Clerc, L. Lucci, G. Ghibaudo, A. Vandooren, F. Boeuf, and T. Skotnicki, "Saturation drain current analytical modeling of single gate fully depleted SOI or SON MOSFETs in the quasi ballistic regime of transport," in Proc. SOI Conf., Oct. 2006, pp. 91-92.
    • (2006) Proc. SOI Conf , pp. 91-92
    • Ferrier, M.1    Clerc, R.2    Lucci, L.3    Ghibaudo, G.4    Vandooren, A.5    Boeuf, F.6    Skotnicki, T.7
  • 8
    • 34047267112 scopus 로고    scopus 로고
    • Experimental determination of the channel backscattering coefficient on 10-70 nm-metal-gate double gate transistors
    • Apr
    • V. Barral, T. Poiroux, M. Vinet, D. Munteanu, J. L. Autran, and S. Deleonibus, "Experimental determination of the channel backscattering coefficient on 10-70 nm-metal-gate double gate transistors," Solid State Electron., vol. 51, no. 4, pp. 537-542, Apr. 2007.
    • (2007) Solid State Electron , vol.51 , Issue.4 , pp. 537-542
    • Barral, V.1    Poiroux, T.2    Vinet, M.3    Munteanu, D.4    Autran, J.L.5    Deleonibus, S.6
  • 11
    • 50249149015 scopus 로고    scopus 로고
    • On the experimental determination of channel back-scattering in nanoMOSFETs
    • M. Zilli, P. Palestri, D. Esseni, and L. Selmi, "On the experimental determination of channel back-scattering in nanoMOSFETs," in IEDM Tech. Dig., 2007, pp. 105-108.
    • (2007) IEDM Tech. Dig , pp. 105-108
    • Zilli, M.1    Palestri, P.2    Esseni, D.3    Selmi, L.4
  • 12
    • 46049120057 scopus 로고    scopus 로고
    • Multi-subband-Monte-Carlo investigation of the mean free path and of the kT layer in degenerated quasi ballistic nanoMOSFETs
    • P. Palestri, R. Clerc, D. Esseni, L. Lucci, and L. Selmi, "Multi-subband-Monte-Carlo investigation of the mean free path and of the kT layer in degenerated quasi ballistic nanoMOSFETs," in IEDM Tech. Dig., 2006, pp. 945-948.
    • (2006) IEDM Tech. Dig , pp. 945-948
    • Palestri, P.1    Clerc, R.2    Esseni, D.3    Lucci, L.4    Selmi, L.5
  • 13
    • 33745728895 scopus 로고    scopus 로고
    • On the physical understanding of the kT-layer concept in quasi-ballistic regime of transport in nanoscale devices
    • Jul
    • R. Clerc, P. Palestri, and L. Selmi, "On the physical understanding of the kT-layer concept in quasi-ballistic regime of transport in nanoscale devices," IEEE Trans. Electron Devices, vol. 53, no. 7, pp. 1634-1640, Jul. 2006.
    • (2006) IEEE Trans. Electron Devices , vol.53 , Issue.7 , pp. 1634-1640
    • Clerc, R.1    Palestri, P.2    Selmi, L.3
  • 14
    • 4344599060 scopus 로고    scopus 로고
    • On the ballistic transport in nanometer-scaled DG MOSFETs
    • Jul
    • J. Saint-Martin, A. Bournel, and P. Dollfus, "On the ballistic transport in nanometer-scaled DG MOSFETs," IEEE Trans. Electron Devices, vol. 51, no. 7, pp. 1148-1155, Jul. 2004.
    • (2004) IEEE Trans. Electron Devices , vol.51 , Issue.7 , pp. 1148-1155
    • Saint-Martin, J.1    Bournel, A.2    Dollfus, P.3
  • 15
    • 0035250137 scopus 로고    scopus 로고
    • On experimental determination of carrier velocity in deeply scaled NMOS: How close to the thermal limit?
    • Feb
    • A. Lochtefeld and D. A. Antoniadis, "On experimental determination of carrier velocity in deeply scaled NMOS: How close to the thermal limit?" IEEE Electron Device Lett., vol. 22, no. 2, pp. 95-97, Feb. 2001.
    • (2001) IEEE Electron Device Lett , vol.22 , Issue.2 , pp. 95-97
    • Lochtefeld, A.1    Antoniadis, D.A.2
  • 16
    • 0035364878 scopus 로고    scopus 로고
    • On the mobility versus drain current relation for a nanoscale MOSFET
    • Jun
    • M. S. Lundstrom, "On the mobility versus drain current relation for a nanoscale MOSFET," IEEE Electron Device Lett., vol. 22, no. 6, pp. 293-295, Jun. 2001.
    • (2001) IEEE Electron Device Lett , vol.22 , Issue.6 , pp. 293-295
    • Lundstrom, M.S.1
  • 17
    • 0036494049 scopus 로고    scopus 로고
    • A compact scattering model for the nanoscale double-gate MOSFET
    • Mar
    • A. Rahman and M. Lundstrom, "A compact scattering model for the nanoscale double-gate MOSFET," IEEE Trans. Electron Device, vol. 49, no. 3, pp. 481-489, Mar. 2002.
    • (2002) IEEE Trans. Electron Device , vol.49 , Issue.3 , pp. 481-489
    • Rahman, A.1    Lundstrom, M.2
  • 18
    • 36449008742 scopus 로고
    • Ballistic metal-oxide-semiconductor field effect transistor
    • Oct
    • K. Natori, "Ballistic metal-oxide-semiconductor field effect transistor," J. Appl. Phys., vol. 76, no. 8, pp. 4879-4890, Oct. 1994.
    • (1994) J. Appl. Phys , vol.76 , Issue.8 , pp. 4879-4890
    • Natori, K.1
  • 19
    • 0020206154 scopus 로고
    • 1/2 (ηF) used to describe electron density in a semiconductor
    • Nov
    • 1/2 (ηF) used to describe electron density in a semiconductor," Solid State Electron., vol. 25, no. 11, pp. 1067-1076, Nov. 1982.
    • (1982) Solid State Electron , vol.25 , Issue.11 , pp. 1067-1076
    • Blakemore, J.S.1
  • 20
    • 50249185663 scopus 로고    scopus 로고
    • Simulation of electron transport in high-mobility MOSFETs: Density of states bottleneck and source starvation
    • M. V. Fischetti, L. Wang, B. Yu, C. Sachs, P. M. Asbeck, Y. Taur, and M. Rodwell, "Simulation of electron transport in high-mobility MOSFETs: Density of states bottleneck and source starvation," in IEDM Tech. Dig., 2007, pp. 109-112.
    • (2007) IEDM Tech. Dig , pp. 109-112
    • Fischetti, M.V.1    Wang, L.2    Yu, B.3    Sachs, C.4    Asbeck, P.M.5    Taur, Y.6    Rodwell, M.7
  • 21
    • 29244435059 scopus 로고    scopus 로고
    • Understanding quasi-ballistic transport in nano-MOSFETs: Part I - Scattering in the channel and in the drain
    • Dec
    • P. Palestri, D. Esseni, S. Eminente, C. Fiegna, E. Sangiorgi, and L. Selmi, "Understanding quasi-ballistic transport in nano-MOSFETs: Part I - Scattering in the channel and in the drain," IEEE Trans. Electron Devices, vol. 52, no. 12, pp. 2727-2735, Dec. 2005.
    • (2005) IEEE Trans. Electron Devices , vol.52 , Issue.12 , pp. 2727-2735
    • Palestri, P.1    Esseni, D.2    Eminente, S.3    Fiegna, C.4    Sangiorgi, E.5    Selmi, L.6
  • 22
  • 29
    • 33751403853 scopus 로고    scopus 로고
    • Variations of hole mass in p-MOSFETs under process-induced mechanical stress
    • T. Guillaume and M. Mouis, "Variations of hole mass in p-MOSFETs under process-induced mechanical stress," in Proc. ESSDERC, 2005, pp. 289-292.
    • (2005) Proc. ESSDERC , pp. 289-292
    • Guillaume, T.1    Mouis, M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.