Electron mobility in quasi-ballistic Si MOSFETs

Solid-State Electronics

Volumn 50, Issue 4, 2006, Pages 632-636

  Lusakowski J ^a   Knap, W ^a   Meziani, Y ^a   Cesso, J P ^a   El Fatimy, A ^a   Tauk, R ^a   Dyakonova, N ^a   Ghibaudo, G ^b   Boeuf, F ^c   Skotnicki, T ^c  

^a UNIVERSITÉ MONTPELLIER 2   (France)

^b IMEP LAHC   (France)

^c STMICROELECTRONICS   (France)

Author keywords

Ballistic motion; Mobility; MOSFET

Indexed keywords

ELECTRON MOBILITY; GATES (TRANSISTOR); LIGHT SCATTERING; MAGNETOELECTRIC EFFECTS; MATHEMATICAL MODELS; SILICON;

BALLISTIC MOTIONS; MAGNETORESISTANCE MEASUREMENTS; MOBILITY; TRANSMISSION COEFFICIENTS;

MOSFET DEVICES;

EID: 33646506375     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.03.017     Document Type: Article

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