Ballistic MOSFET reproduces current - Voltage characteristics of an exrperimental device

IEEE Electron Device Letters

Volumn 23, Issue 11, 2002, Pages 655-657

  Natori, Kenji ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Cryogenic electronics; Current density; MOSFETs; Semiconductor device modeling; Semiconductor devices; Silicon; Transistor

Indexed keywords

BACKSCATTERING; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; LOW TEMPERATURE EFFECTS; SEMICONDUCTING SILICON;

CRYOGENIC ELECTRONICS;

MOSFET DEVICES;

EID: 0036865219     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.803765     Document Type: Article

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