-
1
-
-
36449008742
-
Ballistic metal-oxide-semiconductor field effect transistor
-
Oct.
-
K. Natori, "Ballistic metal-oxide-semiconductor field effect transistor," J. Appl. Phys., vol. 76, no. 8, pp. 4879-4890, Oct. 1994.
-
(1994)
J. Appl. Phys.
, vol.76
, Issue.8
, pp. 4879-4890
-
-
Natori, K.1
-
2
-
-
0035717885
-
The ballistic FET: Design, capacitance and speed limit
-
Dec. 3-5
-
P. M. Solomon and S. E. Laux, "The ballistic FET: Design, capacitance and speed limit," in IEEE Int. Electron. Dev. Meeting (IEDM), Tech. Dig., Dec. 3-5, 2001, pp. 95-98.
-
(2001)
IEEE Int. Electron. Dev. Meeting (IEDM), Tech. Dig.
, pp. 95-98
-
-
Solomon, P.M.1
Laux, S.E.2
-
3
-
-
0033882240
-
On the performance limits for Si MOSFET's: A theoretical study
-
Jan.
-
F. Assad, Z. Ren, D. Vasileska, S. Datta, and M. S. Lundstrom, "On the performance limits for Si MOSFET's: A theoretical study," IEEE Trans. Electron Devices, vol. 47, pp. 232-240, Jan. 2000.
-
(2000)
IEEE Trans. Electron Devices
, vol.47
, pp. 232-240
-
-
Assad, F.1
Ren, Z.2
Vasileska, D.3
Datta, S.4
Lundstrom, M.S.5
-
4
-
-
0034453477
-
The ballistic nanotransistor: A simulation study
-
Dec. 10-13
-
Z. Ren, R. Venugopal, S. Datta, M. Lundstrom, D. Jovanovic, and J. G. Fossum, "The ballistic nanotransistor: A simulation study," in IEDM Tech. Dig., Dec. 10-13, 2000, pp. 715-718.
-
(2000)
IEDM Tech. Dig.
, pp. 715-718
-
-
Ren, Z.1
Venugopal, R.2
Datta, S.3
Lundstrom, M.4
Jovanovic, D.5
Fossum, J.G.6
-
5
-
-
0035250137
-
On experimental determination of carrier velocity in deeply scaled NMOS: How close to the thermal limit?
-
Feb.
-
A. Lochtefeld and D. A. Antoniadis, "On experimental determination of carrier velocity in deeply scaled NMOS: how close to the thermal limit?," IEEE Electron Device Lett., vol. 22, pp. 95-97, Feb. 2001.
-
(2001)
IEEE Electron Device Lett.
, vol.22
, pp. 95-97
-
-
Lochtefeld, A.1
Antoniadis, D.A.2
-
6
-
-
0036713397
-
Low ballistic mobility in submicron HEMT's
-
Sept.
-
M. S. Shur, "Low ballistic mobility in submicron HEMT's," IEEE Electron Device Lett., vol. 23, pp. 511-513, Sept. 2002.
-
(2002)
IEEE Electron Device Lett.
, vol.23
, pp. 511-513
-
-
Shur, M.S.1
-
7
-
-
0036772477
-
30 nm two-step recess gate InP-based InAlAs/lnGaAs HEMT's
-
Oct.
-
T. Suemitsu, H. Yokoyama, T. Ishii, T. Enoki, G. Meneghesso, and E. Zanoni, "30 nm two-step recess gate InP-based InAlAs/lnGaAs HEMT's," IEEE Trans. Electron Devices, vol. 49, pp. 1694-1700, Oct. 2002.
-
(2002)
IEEE Trans. Electron Devices
, vol.49
, pp. 1694-1700
-
-
Suemitsu, T.1
Yokoyama, H.2
Ishii, T.3
Enoki, T.4
Meneghesso, G.5
Zanoni, E.6
-
8
-
-
0036803456
-
T of 562 GHz
-
Oct.
-
T of 562 GHz," IEEE Electron Device Lett., vol. 23, pp. 573-575, Oct. 2002.
-
(2002)
IEEE Electron Device Lett.
, vol.23
, pp. 573-575
-
-
Yamashita, Y.1
Endoh, A.2
Shinohara, K.3
Matsui, T.4
Hiyamizu, S.5
Mimura, T.6
-
9
-
-
0041761616
-
Theory of ballistic nanotransistors
-
Sept. to be published
-
A. Rahman, J. Guo, S. Datta, and M. Lundstrom, "Theory of ballistic nanotransistors," IEEE Trans. Electron Devices, vol. 50, Sept. 2003, to be published.
-
(2003)
IEEE Trans. Electron Devices
, vol.50
-
-
Rahman, A.1
Guo, J.2
Datta, S.3
Lundstrom, M.4
-
10
-
-
0036927921
-
Assessment of silicon MOS and carbon nanotube FET performance limits using a general theory of ballistic transistors
-
Dec. 9-11
-
J. Guo, S. Datta, M. Lundstrom, M. Brink, P. McEuen, A. Javey, H. Dai, H. Kim, and P. McIntyre, ''Assessment of silicon MOS and carbon nanotube FET performance limits using a general theory of ballistic transistors," in IEDM Tech. Dig., Dec. 9-11, 2002, pp. 711-714.
-
(2002)
IEDM Tech. Dig.
, pp. 711-714
-
-
Guo, J.1
Datta, S.2
Lundstrom, M.3
Brink, M.4
McEuen, P.5
Javey, A.6
Dai, H.7
Kim, H.8
McIntyre, P.9
-
11
-
-
36549091403
-
Quantum capacitance devices
-
Feb.
-
S. Luryi, "Quantum capacitance devices," Appl. Phys. Lett. vol. 52, pp. 501-503, Feb. 1988.
-
(1988)
Appl. Phys. Lett.
, vol.52
, pp. 501-503
-
-
Luryi, S.1
-
12
-
-
0019597965
-
Conductance of small semiconductor devices
-
A. A. Kastalsky and M. S. Shur, "Conductance of small semiconductor devices," Solid State Commun., vol. 39, no. 6, pp. 715-718, 1981.
-
(1981)
Solid State Commun.
, vol.39
, Issue.6
, pp. 715-718
-
-
Kastalsky, A.A.1
Shur, M.S.2
-
14
-
-
0036494049
-
A compact scattering model for the nanoscale double-gate MOSFET
-
Mar.
-
A. Rahman and M. Lundstrom, "A compact scattering model for the nanoscale double-gate MOSFET," IEEE Trans. Electron Devices, vol. 49, pp. 481-489, Mar. 2002.
-
(2002)
IEEE Trans. Electron Devices
, vol.49
, pp. 481-489
-
-
Rahman, A.1
Lundstrom, M.2
-
15
-
-
0031191310
-
Elementary scttering theory of the Si MOSFET
-
July
-
M. Lundstrom, "Elementary scttering theory of the Si MOSFET," IEEE Electron Device Lett., vol. 18, pp. 361-363. July 1997.
-
(1997)
IEEE Electron Device Lett.
, vol.18
, pp. 361-363
-
-
Lundstrom, M.1
-
17
-
-
0036253371
-
Essential physics of carrier transport in nanoscale MOSFET's
-
Jan.
-
M. Lundstrom and Z. Ren, "Essential physics of carrier transport in nanoscale MOSFET's," IEEE Trans. Electron Devices, vol. 49, pp. 133-141, Jan. 2002.
-
(2002)
IEEE Trans. Electron Devices
, vol.49
, pp. 133-141
-
-
Lundstrom, M.1
Ren, Z.2
-
19
-
-
0036928734
-
Low field mobility characteristics of Sub-100 nm unstrained and strained Si MOSFET's
-
Dec. 9-11
-
K. Rim, S. Narasimha, M. Longstreet, A. Mocuta, and J. Cai, "Low field mobility characteristics of Sub-100 nm unstrained and strained Si MOSFET's," in IEDM Tech. Dig., Dec. 9-11, 2002, pp. 43-46.
-
(2002)
IEDM Tech. Dig.
, pp. 43-46
-
-
Rim, K.1
Narasimha, S.2
Longstreet, M.3
Mocuta, A.4
Cai, J.5
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