Separation of channel backscattering coefficients in nanoscale MOSFETs

IEEE Transactions on Electron Devices

Volumn 51, Issue 9, 2004, Pages 1409-1415

  Chen, Ming Jer ^a   Huang, Huan Tsung ^b   Chou, Yi Chin ^a   Chen, Rong Ting ^a   Tseng, Yin Ta ^a   Chen, Po Nien ^a   Diaz, Carlos H ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL BACKSCATTERING COEFFICIENTS; CHANNEL BACKSCATTERING THEORY; CHANNEL CONDUCTION BAND; GATE LENGTH; TEMPERATURE DEPENDENT DRAIN CURRENT MODEL;

BACKSCATTERING; COMPUTER SIMULATION; ELECTRIC CURRENTS; GATES (TRANSISTOR); MONTE CARLO METHODS; NANOTECHNOLOGY; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR JUNCTIONS; THERMAL EFFECTS;

MOSFET DEVICES;

EID: 4444272856     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.833586     Document Type: Article

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