Quasi ballistic transport in advanced MOSFET devices

Proceedings of the International Semiconductor Conference, CAS

Volumn 1, Issue , 2007, Pages 35-40

  Clerc, R ^a   Palestri, P ^b   Rafhay, Q ^a   Ferrier, M ^a   Pananakakis, G ^a   Ghibaudo, G ^a   Selmi, L ^b  

^a MINATEC   (France)

^b UNIVERSITY OF UDINE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; EXPLOSIVES; MOSFET DEVICES; SEMICONDUCTOR MATERIALS; TRANSPORT PROPERTIES;

ANALYTICAL MODELLING; QUASI-BALLISTIC TRANSPORT;

BALLISTICS;

EID: 48549086223     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SMICND.2007.4519642     Document Type: Conference Paper

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