Temperature-dependent properties of nc-Si thin films synthesized in low-pressure, thermally nonequilibrium, high-density inductively coupled plasmas

Journal of Physical Chemistry C

Volumn 113, Issue 33, 2009, Pages 14759-14764

  Ostrikov, Kostya ^a,c   Cheng, Qijin ^a   Xu, Shuyan ^b  

^a CSIRO   (Australia)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c UNIVERSITY OF SYDNEY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL VOLUME; FLAT-PANEL DISPLAY; GLASS SUBSTRATES; HIGH-DENSITY; HYDROGEN DILUTION; HYDROGEN TERMINATION; INDUCTIVELY-COUPLED; MAXIMUM VALUES; MEAN-GRAIN SIZE; NON EQUILIBRIUM; OPTICAL BAND-GAP; PREFERENTIAL GROWTH; SI FILMS; SILANE PRECURSOR; SILICON THIN FILM; SINGLE CRYSTAL SILICON; STRUCTURAL AND OPTICAL PROPERTIES; SUBSTRATE TEMPERATURE; TEMPERATURE-DEPENDENT PROPERTIES; THIN-FILM SOLAR CELLS; UV-VIS SPECTROSCOPY; X RAY DIFFRACTOMETRY;

CRYSTAL ORIENTATION; DEPOSITION; ENERGY GAP; FILM GROWTH; FLAT PANEL DISPLAYS; GRAIN SIZE AND SHAPE; HYDROGEN; INDUCTIVELY COUPLED PLASMA; LIGHT TRANSMISSION; NANOCRYSTALLINE SILICON; OPTICAL BAND GAPS; OPTICAL MICROSCOPY; OPTICAL PROPERTIES; PLASMA DEPOSITION; PLASMA DIAGNOSTICS; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILANES; SOLAR POWER GENERATION; SURFACE DIFFUSION; THIN FILM DEVICES; THIN FILM TRANSISTORS; THIN FILMS; ULTRAVIOLET SPECTROSCOPY;

SUBSTRATES;

EID: 69049092127     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp9047083     Document Type: Article

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