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Volumn 395, Issue 1-2, 2001, Pages 206-212

The role of hydrogen dilution of silane and phosphorus doping on hydrogenated microcrystalline silicon (μc-Si:H) films prepared by hot-wire chemical vapor deposition (HW-CVD) technique

(5) Jadkar, S R a Sali, J V a Takwale, M G a Musale, D V b Kshirsagar, S T b

a UNIVERSITY OF PUNE (India)

b NATIONAL CHEMICAL LABORATORY (India)

Author keywords

Electrical properties; HW CVD; Microcrystalline silicon; Optical properties; Raman spectroscopy

Indexed keywords

ACTIVATION ENERGY; CHARGE CARRIERS; CHEMICAL VAPOR DEPOSITION; CRYSTAL MICROSTRUCTURE; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; OPTICAL PROPERTIES; PHASE TRANSITIONS; PHOSPHORUS; RAMAN SPECTROSCOPY; SILANES; SILICON; THERMAL CONDUCTIVITY; X RAY DIFFRACTION ANALYSIS;

MICROCRYSTALLINE SILICON;

THIN FILMS;

EID: 0035800998 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(01)01269-X Document Type: Conference Paper

Times cited : (25)

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