Crystallization of LPCVD Silicon Films by Low Temperature Annealing

Journal of the Electrochemical Society

Volumn 136, Issue 4, 1989, Pages 1169-1173

  Aoyama, T ^a   Kawachi, G ^a   Konishi, N ^a   Suzuki, T ^a   Okajima, Y ^a   Miyata, K ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HEAT TREATMENT--ANNEALING; SEMICONDUCTING SILICON--CRYSTALLIZATION; TRANSISTORS--THIN FILMS;

CRYSTALLITE NUMBER; ELECTRON MOBILITY; ELECTRON SPIN DENSITY; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; LOW TEMPERATURE ANNEALING;

SEMICONDUCTING FILMS;

EID: 0024639578     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2096829     Document Type: Article

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