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Volumn 418, Issue 6893, 2002, Pages 62-65

Mechanism of hydrogen-induced crystallization of amorphous silicon

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CHEMICAL BONDS; COMPUTER SIMULATION; CRYSTALLIZATION; GRAIN SIZE AND SHAPE; HYDROGEN; INFRARED SPECTROSCOPY; MOLECULAR DYNAMICS; NANOSTRUCTURED MATERIALS; NUCLEATION; OPTOELECTRONIC DEVICES; PLASMAS;

EID: 0037019294     PISSN: 00280836     EISSN: None     Source Type: Journal    
DOI: 10.1038/nature00866     Document Type: Article
Times cited : (397)

References (30)
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    • Plasma deposition of hydrogenated amorphous silicon: Studies of the growth surface
    • (1993) Appl. Phys. A , vol.56 , pp. 493-512
    • Abelson, J.R.1
  • 8
    • 0031560356 scopus 로고    scopus 로고
    • Role of the hydrogen plasma treatment in layer-by-layer deposition of microcrystalline silicon
    • (1997) Appl. Phys. Lett. , vol.71 , pp. 3403-34135
    • Saitoh, K.1
  • 11
    • 18744402453 scopus 로고    scopus 로고
    • Plasma-enhanced chemical vapour deposition of microcystalline silicon: On the dynamics of the amorphous-microcrystalline interface by optical methods
    • (2000) Phil. Mag. B , vol.80 , pp. 459-473
    • Summonte, C.1
  • 24
    • 16444366630 scopus 로고
    • New empirical approach for the structure and energy of covalent systems
    • (1988) Phys. Rev. B , vol.37 , pp. 6991-7000
    • Tersoff, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.