Nanocrystalline silicon films prepared from silane plasma in RF-PECVD, using helium dilution without hydrogen: Structural and optical characterization

Nanotechnology

Volumn 18, Issue 41, 2007, Pages

  Bhattacharya, Koyel ^a   Das, Debajyoti ^a  

^a DEPARTMENT OF MATERIALS SCIENCE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

GROWTH RATE; NANOCRYSTALLINE MATERIALS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILANES; SILICON; ULTRAVIOLET VISIBLE SPECTROSCOPY;

HELIUM DILUTION; OPTICAL GAP; STRUCTURAL TRANSFORMATION; SUBSTRATE TEMPERATURE;

THIN FILMS;

HELIUM; HYDROGEN; NANOCRYSTAL; SILANE; SILICON;

ABSORPTION; ARTICLE; CRYSTALLIZATION; ELECTRON MICROSCOPY; FILM; GROWTH; INFRARED RADIATION; NANOANALYSIS; OPTICS; PLASMA; POLYMERIZATION; PRIORITY JOURNAL; STRUCTURE ANALYSIS; TEMPERATURE; ULTRAVIOLET SPECTROSCOPY; X RAY DIFFRACTION;

EID: 34748898308     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/18/41/415704     Document Type: Article

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