Heat dissipation in high-power GaN electronics on thermally resistive substrates

IEEE Transactions on Electron Devices

Volumn 52, Issue 8, 2005, Pages 1683-1688

  Christensen, Adam ^a   Doolittle, William A ^b   Graham, Samuel ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Gallium nitride (GaN); Lithium gallate (LGO); Power electronics; Thermal conductivity

Indexed keywords

FINITE ELEMENT METHOD; GALLIUM NITRIDE; HEAT LOSSES; MATHEMATICAL MODELS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS; SUBSTRATES; THERMAL CONDUCTIVITY;

LITHIUM GALLATE (LGO); THERMALLY RESISTIVE SUBSTRATES;

POWER ELECTRONICS;

EID: 23344434890     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.851815     Document Type: Article

References (28)

1. Linthicum, Hanser, Zheleva, Nam, and Davis, "Wide bandgap semiconductors and device challenges," Nav. Res. Rev., vol. 51, pp. 46-51, 1999.
2. J. J. Xu, Y. F. Wu, S. Keller, G. Parish, S. Heikman, B. J. Thibeault, U. K. Mishra, and R. A. York, "1-8 GHz GaN-based power amplifier using flip chip bonding," IEEE Microw. Guided Wave Lett., vol. 9, no. 7, pp. 277-279, Jul. 1999.
3. J. Sun, H. Fatima, A. Koudymov, A. Chitnis, X. Hu, H. M. Wang, J. Zhang, G. Simin, J. Yang, and M. A. Khan, "Thermal management of AlGaN-GaN HFETs on sapphire using flip-chip bonding with epoxy underfill," IEEE Electron Device Lett., vol. 24, no. 4, pp. 375-377, Apr. 1999.
4. C. D. Patel, "Backside cooling solution for high power flip chip multichip modules," in Proc. Electronic Components Technology Conf., 1994, pp. 442-449.
5. S. L. Lee, Z. H. Yang, and Y. Hsyua, "Cooling of a heated surface by mist flow," J. Heat Transf., vol. 116, pp. 167-172, 1994.
6. S. Heffington, W. Z. Black, and A. Glezer, "Vibration-Induced droplet atomization heat transfer cell for cooling of microelectronic components," in Proc. Int. Electronic Packaging Conf. 2001, 2001, pp. 779-784.
7. J. Y. Murthy, C. H. Amon, K. Gabriel, P. Kumta, and S. C. Yao, "MEMS-based thermal management of electronics using spray impingement," in Proc. Int. Electronic Packaging Conf., pp. 733-744.
8. 2 for high frequency, high power electronic applications," Solid State Electron., vol. 44, pp. 229-238, 2000.
9. Florescu et al., "Thermal conductivity of fully and partially coalesced lateral epitaxial overgrown GaN/sapphire (0001) by scanning thermal microscopy," Appl. Phys. Lett., vol. 77, no. 10, pp. 1464-1466, 2000.
10. S. W. Seo, K. K. Lee, S. Kang, S. Huang, W. A. Doolittle, N. M. Jokerst, and A. Brown, "GaN metal-semiconductor-metal photodetectors grown on lithium gallate substrate by molecular beam epitaxy," Appl. Phys. Lett., vol. 79, no. 9, pp. 1372-1374, 2001.
11. D. Cahill, "Thermal conductivity measurement from 30 to 750 K: The 3ω method," Rev. Sci. Instrum., vol. 61, no. 2, pp. 802-808, 1990.
12. J. Callaway, "Model for lattice thermal conductivity at low temperatures," Phys. Rev., vol. 113, no. 4, pp. 1046-1051, 1959.
13. M. G. Holland, "Analysis of lattice thermal conductivity," Phys. Rev., vol. 132, no. 6, pp. 2461-2471, 1963.
14. P. G. Klemens, "The thermal conductivity of dielectric solids at low termperature," Proc. Phys. Soc. London A, vol. 208, pp. 108-133, 1951.
15. J. E. Parrott, "The high temperature thermal conductivity of semiconductor alloys" Proc. Phys. Soc., vol. 81, pp. 726-735, 1963.
16. W. P. Mason, Physical Acoustics and the Properties of Solids: Bell Telephone Laboratory Series, 1958.
17. 2 single crystal," NEC Res. Develop., no. 28, pp. 72-79, 1973.
18. D. Kotchetkov, J. Zou, A. A. Balandin, D. I. Florescu, and F. H. Pollak, "Effect of dislocations on thermal conductivity of GaN layers," Appl. Phys. Lett., vol. 79, no. 26, pp. 4316-4318, 2001.
19. R. Anholt, Electrical and Thermal Characterization of MESFETs, HEMTs, and HBTs. Norwood, MA: Artech House, 1995.
20. M. Kuball, J. M. Hayes, M. J. Uren, T. Martin, J. Birbeck, R. Balmer, and B. Hughes, "Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy," IEEE Electron Device Lett., vol. 23, no. 1, pp. 7-9, Jan. 2001.
21. U. Mishra and S. Keller, "GaN-based solutions for communications and sensing," Nav. Res. Rev., vol. 51, p. 54, 1999.
22. E. T. Swartz and R. O. Pohl, "Thermal boundary resistance," Rev. Mod. Phys., vol. 61, no. 3, pp. 605-668, 1989.
23. A. Majumdar and P. Reddy, "Role of electron-phonon coupling on thermal conductance of metal-nonmetal interfaces," Appl. Phys. Lett., vol. 84, no. 23, pp. 4768-4770, 2004.
24. D. Zou, J. Kotchetkov, A. A. Balandin, D. I. Florescu, and F. H. Pollak, "Thermal conductivity of GaN films: Effects of impuritites and dislocations," J. Appl. Phys., vol. 92, no. 5, pp. 2534-2539, 2002.
25. V. Bourgrov, M. Levinshtein, S. Rumyantsev, and A. Zubrilov, Properties of Advanced Semiconductor Materials: Wiley, 2001.
26. I. Mudawar, "Assessment of high heat flux thermal management schemes," in Proc. Intersociety Conf. - Thermomechanical Phenomena in Electronic Systems, vol. 1, 2000, pp. 1-20.
27. A. Cotler, E. Brown, V. Dhir, and M. Shaw, "Chip-Level spray cooling of an LD-MOSFET RF power amplifier," IEEE Trans. Compon. Packag. Technol., vol. 27, no. 2, pp. 411-416, Feb. 2004.
28. A. Jezowski, B. A. Danilchenko, M. Bockowski, I. Grzegory, S. Krukowski, T. Suski, and T. Paszkiewicz, "Thermal conductivity of GaN crystals in 4.2-300 K range," Solid State Commun., vol. 128, pp. 69-73, 2003.