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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 3, 2002, Pages 1221-1228

Role of low-temperature (200 °C) nitridation in the growth of GaN by plasma-assisted molecular-beam epitaxy

(6) Namkoong, Gon a Doolittle, W Alan a Brown, April S a Losurdo, Maria b Capezzuto, Pio b Bruno, Giovanni b

a GEORGIA INSTITUTE OF TECHNOLOGY (United States)

b CNR (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; ELLIPSOMETRY; GALLIUM NITRIDE; HIGH TEMPERATURE EFFECTS; LOW TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; NITRIDING; OPTICAL PROPERTIES; SAPPHIRE; SECONDARY ION MASS SPECTROMETRY; SURFACE CHEMISTRY; X RAY PHOTOELECTRON SPECTROSCOPY;

PLASMA-ASSISTED MOLECULAR BEAM EPITAXY;

SEMICONDUCTING GALLIUM;

EID: 0035998574 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1470514 Document Type: Conference Paper

Times cited : (21)

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