SCOPUS 정보 검색 플랫폼

Materials Research Society Symposium - Proceedings

Volumn 798, Issue , 2003, Pages 359-364

Effect of buffer design on AlGaN/AlN/GaN heterostrucutres by MBE

(6) Namkoong, Gon a Doolittle, W Alan a Brown, A S b Losurdo, M c Giangregorio, M M c Bruno, G c

a GEORGIA INSTITUTE OF TECHNOLOGY (United States)

b Duke University (United States)

c CNR (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL LATTICES; DESORPTION; EPITAXIAL GROWTH; HETEROJUNCTIONS; ORGANIC ACIDS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; X RAY DIFFRACTION;

EPITAXIAL LAYERS; NITRIDATION; STRUCTURAL QUALITY; TEMPERATURE MOBILITY;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 2942657330 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: 10.1557/proc-798-y10.62 Document Type: Conference Paper

Times cited : (3)

References (10)

1
- 0037401849
- G. Namkoong, W.A. Doolittle, A.S. Brown, M. Losurdo, P. Capezzuto, and G. Bruno, J. of Crystal Growth, 252, 159 (2003)
- (2003) J. of Crystal Growth , vol.252 , pp. 159
- Namkoong, G.¹ Doolittle, W.A.² Brown, A.S.³ Losurdo, M.⁴ Capezzuto, P.⁵ Bruno, G.⁶

2
- 0033876791
- G. Ferro, H. Okumura, T. Ide, S. Yoshida, J. Crystal Growth, 210, 429 (2000)
- (2000) J. Crystal Growth , vol.210 , pp. 429
- Ferro, G.¹ Okumura, H.² Ide, T.³ Yoshida, S.⁴

3
- 0032094197
- K. Balakrishnan, H. Okumura, S. Yoshida, J. Crystal Growth, 189/190, 244 (1998)
- (1998) J. Crystal Growth , vol.189-190 , pp. 244
- Balakrishnan, K.¹ Okumura, H.² Yoshida, S.³

4
- 0038608430
- P. Visconti, D. Huang, M. A. Reshchikov, F. Yun, T. King, A. A. Baski, R. Cingolani, C. W. Litton, J. Jasinski, Z. Liliental-Weber, and H. Morkoc, phys.stat.sol. 228, 513 (2001)
- (2001) Phys. Stat. Sol. , vol.228 , pp. 513
- Visconti, P.¹ Huang, D.² Reshchikov, M.A.³ Yun, F.⁴ King, T.⁵ Baski, A.A.⁶ Cingolani, R.⁷ Litton, C.W.⁸ Jasinski, J.⁹ Liliental-Weber, Z.¹⁰ Morkoc, H.¹¹

5
- 2942645494
- submitted to
- M.Losurdo, M. M. Giangregorio, P. Capezzuto, G. Bruno, G. Namkoong, W.A. Doolittle, and A.S. Brown, submitted to J. Appl. Phys. (2003)
- (2003) J. Appl. Phys.
- Losurdo, M.¹ Giangregorio, M.M.² Capezzuto, P.³ Bruno, G.⁴ Namkoong, G.⁵ Doolittle, W.A.⁶ Brown, A.S.⁷

6
- 2942745442
- G. Namkoong, W.A. Doolittle, A.S. Brown, M. Losurdo, P. Capezzuto, and G. Bruno, J. Appl. Phys. 91, 2499 (2002)
- (2002) J. Appl. Phys. , vol.91 , pp. 2499
- Namkoong, G.¹ Doolittle, W.A.² Brown, A.S.³ Losurdo, M.⁴ Capezzuto, P.⁵ Bruno, G.⁶

7
- 0037084016
- M.Losurdo, P. Capezzuto, G. Bruno, G. Namkoong, W.A. Doolittle, and A.S. Brown, J. Appl. Phys. 91, 2508 (2002)
- (2002) J. Appl. Phys. , vol.91 , pp. 2508
- Losurdo, M.¹ Capezzuto, P.² Bruno, G.³ Namkoong, G.⁴ Doolittle, W.A.⁵ Brown, A.S.⁶

8
- 0000381939
- F. Widmann, G. Feuillet, B. Daudin, and J. L. Rouviere, J. Appl. Phys. 85, 1550 (1999)
- (1999) J. Appl. Phys. , vol.85 , pp. 1550
- Widmann, F.¹ Feuillet, G.² Daudin, B.³ Rouviere, J.L.⁴

9
- 0000620946
- L. Hsu, and W. Walukiewicz, J. Appl. Phys. 89, 1783 (2001)
- (2001) J. Appl. Phys. , vol.89 , pp. 1783
- Hsu, L.¹ Walukiewicz, W.²

10
- 0037049676
- Z. Y. Fan, J. Li, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 81, 4649 (2001)
- (2001) Appl. Phys. Lett. , vol.81 , pp. 4649
- Fan, Z.Y.¹ Li, J.² Lin, J.Y.³ Jiang, H.X.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.