MBE growth of high quality GaN on LiGaO2 for high frequency, high power electronic applications

Solid-State Electronics

Volumn 44, Issue 2, 2000, Pages 229-238

  Doolittle, William A ^a   Kang, Sangbeom ^a   Brown, April ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; DISLOCATIONS (CRYSTALS); GALLIUM; INDIUM ALLOYS; LATTICE CONSTANTS; LITHIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; NITRIDES; POWER ELECTRONICS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; THERMAL CONDUCTIVITY OF SOLIDS; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM NITRIDE; LATTICE MATCH; LITHIUM GALLATE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0034140514     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00228-2     Document Type: Article

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