A synchrotron radiation photoemission study of gallium and nitrogen adsorption on 6H-SiC, LiGaO2 and GaN substrates: Initial stages of GaN formation

Surface Science

Volumn 411, Issue 3, 1998, Pages 329-343

  Klauser, Ruth ^a   Kumar, P S Asoka ^b   Chuang, T J ^b  

^a NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

^b INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

Author keywords

Ammonia; Gallium; GaN; LiGaO2; SiC; Synchrotron radiation photoelectron spectroscopy; Trimethylgallium

Indexed keywords

AMMONIA; DESORPTION; GALLIUM; GALLIUM COMPOUNDS; GAS ADSORPTION; LITHIUM COMPOUNDS; NITROGEN; NUCLEATION; PHOTOELECTRON SPECTROSCOPY; SILICON CARBIDE;

SYNCHROTRON RADIATION PHOTOELECTRON SPECTROSCOPY; TRIMETHYL GALLIUM;

SURFACE PHENOMENA;

EID: 0032141319     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(98)00357-4     Document Type: Article

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