Steady-state and transient electron transport within the III-V nitride semiconductors, GaN, AlN, and InN: A review

Journal of Materials Science: Materials in Electronics

Volumn 17, Issue 2, 2006, Pages 87-126

  O'Leary, Stephen K ^a   Foutz, Brian E ^b,d   Eastman, Lester F ^b   Shur, Michael S ^c  

^a UNIVERSITY OF REGINA   (Canada)

^b Cornell University   (United States)

^c RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^d Cadence Design Systems   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRON TRANSPORT PROPERTIES; MONTE CARLO METHODS; NITRIDES;

MONTE CARLO SIMULATIONS; NITRIDE SEMICONDUCTORS; STEADY-STATE ELECTRON TRANSPORT; TRANSIENT ELECTRON TRANSPORT;

SEMICONDUCTOR MATERIALS;

EID: 33645637950     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-006-5624-2     Document Type: Review

References (118)

1. S. Strite, H. Morkoç, J. Vac. Sci. Technol. B 10, 1237 (1992)
2. H. Morkoç, S. Strite, G. B. Gao, M. E. Lin, B. Sverdlov, M. Burns, J. Appl. Phys. 76, 1363 (1994)
3. S.N. Mohammad, H. Morkoç, Prog. Quantum Electron. 20, 361 (1996)
4. S.J. Pearton, J.C. Zolper, R.J. Shul, F. Ren, J. Appl. Phys. 86, 1 (1999)
5. M.E. Levinshtein, S.L. Rumyantsev, M.S. Shur, (Eds.), Properties of Advanced Semiconductor Materials: GaN, AlN, InN, BN, SiC, SiGe (Wiley, New York, 2001)
6. B. Gil, (Ed.), Low-dimensional Nitride Semiconductors (Oxford, New York, 2002)
7. M.S. Shur, R.F. Davis, (Eds.), GaN-based Materials and Devices: Growth, Fabrication, Characterization, and Performance (World Scientific, London, 2004)
8. F. Ren, J.C. Zolper, (Eds.), Wide Energy Bandgap Electronic Devices (World Scientific, London, 2003)
9. S.J. Pearton, C.R. Abernathy, F. Ren, Gallium Nitride Processing for Electronics, Sensors and Spintronics (Springer-Verlag, Berlin, 2006)
10. M.S. Shur, M.A. Khan, Mater. Res. Soc. Bull. 22 (2), 44 (1997)
11. M.A. Khan, J.W. Yang, W. Knap, E. Frayssinet, X. Hu, G. Simin, P. Prystawko, M. Leszczynski, I. Grzegory, S. Porowski, R. Gaska, M.S. Shur, B. Beaumont, M. Teisseire, G. Neu, Appl. Phys. Lett. 76, 3807 (2000)
12. X. Hu, J. Deng, N. Pala, R. Gaska, M.S. Shur, C.Q. Chen, J. Yang, G. Simin, M.A. Khan, J.C. Rojo, L.J. Schowalter, Appl. Phys. Lett. 82, 1299 (2003)
13. W. Lu, V. Kumar, E.L. Piner, I. Adesida, IEEE Trans. Electron Devices 50, 1069 (2003)
14. A. Jiménez, Z. Bougrioua, J.M. Tirado, A.F. Braña, E. Calleja, E. Muñoz, I. Moerman, Appl. Phys. Lett. 82, 4827 (2003)
15. A.A. Burk, Jr., M.J. O'Loughlin, R.R. Siergiej, A.K. Agarwal, S. Sriram, R.C. Clarke, M.F. MacMillan, V. Balakrishna, C.D. Brandt, Solid-State Electron. 43, 1459 (1999)
16. S. Karmalkar, M.S. Shur, R. Gaska, in Wide Energy Bandgap Electronic Devices, edited by F. Ren and J.C. Zolper, (World Scientific, London, 2003) pp. 173-216.
17. S. Nakamura, Mater. Res. Soc. Bull. 22 (2), 29 (1997)
18. S.F. Chichibu, S. Nakamura, (Eds.), Nitride Semiconductor Blue Lasers and Light Emitting Diodes (Taylor and Francis, New York, 2000)
19. S. Nakamura, S. Pearton, G. Fasol, The Blue Laser Diode: The Complete Story, 2nd. ed. (Springer-Verlag, New York, 2000)
20. M. Umeno, T. Egawa, H. Ishikawa, Mater. Sci. Semicond. Process. 4, 459 (2001)
21. A. Krost, A. Dadgar, Phys. Status Solidi A 194, 361 (2002)
22. A. Žukauskas, M.S. Shur, R. Gaska, Introduction to Solid-State Lighting (Wiley, New York, 2002)
23. C.L. Tseng, M.J. Youh, G.P. Moore, M.A. Hopkins, R. Stevens, W.N. Wang, Appl. Phys. Lett. 83, 3677 (2003)
24. M.S. Shur, A. Žukauskas, (Eds.), UV Solid-State Light Emitters and Detectors (Kluwer, Boston, 2004)
25. J.C. Carrano, A. Žukauskas, (Eds.), Optically Based Biological and Chemical Sensing for Defense (SPIE, Bellingham, 2004)
26. M.A. Littlejohn, J.R. Hauser, T.H. Glisson, Appl. Phys. Lett. 26, 625 (1975)
27. D.K. Ferry, Phys. Rev. B 12, 2361 (1975)
28. P. Das, D.K. Ferry, Solid-State Electron. 19, 851 (1976)
29. B. Gelmont, K. Kim, M. Shur, J. Appl. Phys. 74, 1818 (1993)
30. V.W.L. Chin, T.L. Tansley, T. Osotchan, J. Appl. Phys. 75, 7365 (1994)
31. N.S. Mansour, K.W. Kim, M.A. Littlejohn, J. Appl. Phys. 77, 2834 (1995)
32. J. Kolník, I. H. Oǧuzman, K.F. Brennan, R. Wang, P.P. Ruden, Y. Wang, J. Appl. Phys. 78, 1033 (1995)
33. M. Shur, B. Gelmont, M.A. Khan, J. Electron. Mater. 25, 777 (1996)
34. B.E. Foutz, L.F. Eastman, U.V. Bhapkar, M.S. Shur, Appl. Phys. Lett. 70, 2849 (1997)
35. U.V. Bhapkar, M.S. Shur, J. Appl. Phys. 82, 1649 (1997)
36. S.K. O'Leary, B.E. Foutz, M.S. Shur, U.V. Bhapkar, L.F. Eastman, J. Appl. Phys. 83, 826 (1998)
37. S.K. O'Leary, B.E. Foutz, M.S. Shur, U.V. Bhapkar, L.F. Eastman, Solid State Commun. 105, 621 (1998)
38. J.D. Albrecht, R.P. Wang, P.P. Ruden, M. Farahmand, K.F. Brennan, J. Appl. Phys. 83, 1446 (1998)
39. N.G. Weimann, L.F. Eastman, D. Doppalapudi, H.M. Ng, T.D. Moustakas, J. Appl. Phys. 83, 3656 (1998)
40. J.D. Albrecht, R.P. Wang, P.P. Ruden, M. Farahmand, K.F. Brennan, J. Appl. Phys. 83, 4777 (1998)
41. E. Bellotti, B.K. Doshi, K.F. Brennan, J.D. Albrecht, P.P. Ruden, J. Appl. Phys. 85, 916 (1999)
42. B.E. Foutz, S.K. O'Leary, M.S. Shur, L.F. Eastman, J. Appl. Phys. 85, 7727 (1999)
43. S.K. O'Leary, B.E. Foutz, M.S. Shur, L.F. Eastman, Solid State Commun. 118, 79 (2001)
44. T.F. de Vasconcelos, F.F. Maia, Jr., E.W.S. Caetano, V.N. Freire, J.A.P. da Costa, E.F. da Silva, Jr., J. Cryst. Growth 246, 320 (2002)
45. S.K. O'Leary, B.E. Foutz, M.S. Shur, L.F. Eastman, J. Electron. Mater. 32, 327 (2003)
46. M. Wraback, H. Shen, J.C. Carrano, T. Li, J.C. Campbell, M.J. Schurman, I.T. Ferguson, Appl. Phys. Lett. 76, 1155 (2000)
47. S. Krishnamurthy, M. van Schilfgaarde, A. Sher, A.-B. Chen, Appl. Phys. Lett. 71, 1999 (1997)
48. D.K. Ferry, C. Jacoboni, (Eds.), Quantum Transport in Semiconductors (Plenum Press, New York, 1992)
49. N.W. Ashcroft, N.D. Mermin, Solid State Physics (Saunders College, Philadelphia, 1976)
50. P.A. Sandborn, A. Rao, P.A. Blakey, IEEE Trans. Electron Devices 36, 1244 (1989)
51. D.C. Look, J.R. Sizelove, S. Keller, Y.F. Wu, U.K. Mishra, S.P. DenBaars, Solid State Commun. 102, 297 (1997)
52. N.A. Zakhleniuk, C.R. Bennett, B.K. Ridley, M. Babiker, Appl. Phys. Lett. 73, 2485 (1998)
53. B.R. Nag, Electron Transport in Compound Semiconductors (Springer-Verlag, Berlin, 1980)
54. M.S. Krishnan, N. Goldsman, A. Christou, J. Appl. Phys. 83, 5896 (1998)
55. R. Oberhuber, G. Zandler, P. Vogl, Appl. Phys. Lett. 73, 818 (1998)
56. By an equilibrium state, however, we are not necessarily referring to thermal equilibrium, thermal equilibrium only being achieved in the absence of an applied electric field.
57. By electron drift velocity, we are referring to the average electron velocity, determined by statistically averaging over the entire electron ensemble.
58. A. Papoulis, Probability, Random Variables, and Stochastic Processes, 3rd ed. (McGraw-Hill, New York, 1991)
59. W. Fawcett, A.D. Boardman, S. Swain, J. Phys. Chem. Solids 31, 1963 (1970)
60. C. Kittel, Introduction to Solid State Physics, 8th ed. (Wiley, New York, 2005)
61. C. Jacoboni, P. Lugli, The Monte Carlo Method for Semiconductor Device Simulation (Springer-Verlag, New York, 1989)
62. B.K. Ridley, Quantum Processes in Semiconductors, 3rd. ed. (Oxford, New York, 1993)
63. M. Shur, Physics of Semiconductor Devices (Prentice Hall, Englewood Cliffs, 1990)
64. P. Lugli, D.K. Ferry, IEEE Trans. Electron Devices 32, 2431 (1985)
65. K. Seeger, Semiconductor Physics: An Introduction, 9th ed. (Springer-Verlag, Berlin, 2004)
66. t,have been taken from Chin et al. [30].
67. e for the m* effective mass associated with InN was drawn from the review article of Mohammad and Morkoç [3], who cited the work of Tyagai et al. [68, 69].
68. V.A. Tyagai, A.M. Evstigneev, A.N. Krasiko, A.F. Andreeva, V.Y. Malakhov, Sov. Phys. Semicond. 11, 1257 (1977)
69. V.A. Tyagai, O.V. Snitko, A.M. Evstigneev, A.N. Krasiko, Phys. Status Solidi B 103, 589 (1981)
70. 14 values selected for bulk wurtzite GaN and bulk wurtzite InN are those suggested by Chin et al. [30]. The e 14 value selected for bulk wurtzite AlN is that suggested by O'Leary et al. [37].
71. A. Bykhovski, B. Gelmont, M. Shur, A. Khan, J. Appl. Phys. 77, 1616 (1995)
72. A.D. Bykhovski, V.V. Kaminski, M.S. Shur, Q.C. Chen, M. A. Khan, Appl. Phys. Lett. 68, 818 (1996)
73. H.P. Maruska, J.J. Tietjen, Appl. Phys. Lett. 15, 327 (1969)
74. W.M. Yim, E.J. Stofko, P.J. Zanzucchi, J.I. Pankove, M. Ettenberg, S.L. Gilbert, J. Appl. Phys. 44, 292 (1973)
75. T.L. Tansley, C.P. Foley, J. Appl. Phys. 59, 3241 (1986).
76. All intervalley deformation potentials are set to 10 9 eV/cm, following the approach of Gelmont et al. [29].
77. We follow the approach of Bhapkar and Shur [35], and set the intervalley phonon energies equal to the polar optical phonon energy, a relationship which holds approximately for gallium arsenide [78].
78. M.A. Littlejohn, J.R. Hauser, T.H. Glisson, J. Appl. Phys. 48, 4587 (1977)
79. W.R.L. Lambrecht, B. Segall, in Properties of Group III Nitrides, No. 11 EMIS Datareviews Series, edited by J.H. Edgar (Inspec. London, 1994), Chapter 4
80. J.S. Blakemore, J. Appl. Phys. 53, R123 (1982)
81. K. Osamura, S. Naka, Y. Murakami, J. Appl. Phys. 46, 3432 (1975)
82. V.Y. Davydov, A.A. Klochikhin, V.V. Emtsev, S.V. Ivanov, V.V. Vekshin, F. Bechstedt, J. Furthmüller, H. Harima, A.V. Mudryi, A. Hashimoto, A. Yamamoto, J. Aderhold, J. Graul, E.E. Haller, Phys. Status Solidi B 230, R4 (2002)
83. J. Wu, W. Walukiewicz, K.M. Yu, J.W. Ager III, E.E. Haller, H. Lu, W.J. Schaff, Y. Saito, Y. Nanishi, Appl. Phys. Lett. 80, 3967 (2002)
84. T. Matsuoka, H. Okamoto, M. Nakao, H. Harima, E. Kurimoto, Appl. Phys. Lett. 81, 1246 (2002)
85. K.T. Tsen, C. Poweleit, D.K. Ferry, H. Lu, W.J. Schaff, Appl. Phys. Lett. 86, 222103 (2005)
86. Q.X. Guo, T. Tanaka, M. Nishio, H. Ogawa, X.D. Pu, W.Z. Shen, Appl. Phys. Lett. 86, 231913 (2005)
87. E.G. Brazel, M.A. Chin, V. Narayanamurti, D. Kapolnek, E.J. Tarsa, S.P. DenBaars, Appl. Phys. Lett. 70, 330 (1997)
88. This result is somewhat different from that found earlier by O'Leary et al. [36], as a slightly different InN band structure was employed by O'Leary et al. [36].
89. J.D. Albrecht, R. Wang, P.P. Ruden, M. Farahmand, E. Bellotti, K.F. Brennan, Mater. Res. Symp. Proc. 482, 815 (1997)
90. B.E. Foutz, S.K. O'Leary, M.S. Shur, L.F. Eastman, Mater. Res. Symp. Proc. 572, 445 (1999)
91. J.G. Ruch, IEEE Trans. Electron Devices 19, 652 (1972)
92. M.S. Shur, L.F. Eastman, IEEE Trans. Electron Devices 26, 1677 (1979)
93. M. Heiblum, M.I. Nathan, D.C. Thomas, C.M. Knoedler, Phys. Rev. Lett. 55, 2200 (1985)
94. A. Palevski, M. Heiblum, C.P. Umbach, C.M. Knoedler, A.N. Broers, R.H. Koch, Phys. Rev. Lett. 62, 1776 (1989)
95. A. Palevski, C.P. Umbach, M. Heiblum, Appl. Phys. Lett. 55, 1421 (1989)
96. A. Yacoby, U. Sivan, C.P. Umbach, J.M. Hong, Phys. Rev. Lett. 66, 1938 (1991)
97. E. Tiede, M. Thimann, K. Sensse, Chem. Berichte 61, 1568 (1928)
98. W.C. Johnson, J.B. Parsons, M.C. Crew, J. Phys. Chem. 36, 2561 (1932)
99. R. Juza, H. Hahn, Zeitschr. Anorgan. Allgem. Chem. 239, 282 (1938)
100. Z.C. Huang, R. Goldberg, J.C. Chen, Y. Zheng, D.B. Mott, P. Shu, Appl. Phys. Lett. 67, 2825 (1995)
101. L.F. Eastman, V. Tilak, J. Smart, B.M. Green, E.M. Chumbes, R. Dimitrov, H. Kim, O.S. Ambacher, N. Weimann, T. Prunty. M. Murphy, W. J. Schaff, J.R. Shealy, IEEE Trans. Electron Devices 48, 479 (2001)
102. C.H. Oxley, M.J. Uren, IEEE Trans. Electron Devices 52, 165 (2005)
103. M. Wraback, H. Shen, J.C. Carrano, C.J. Collins, J.C. Campbell, R.D. Dupuis, M.J. Schurman, I.T. Ferguson, Appl. Phys. Lett. 79, 1303 (2001)
104. A. Matulionis, J. Liberis, L. Ardaravǐius, M. Ramonas, I. Matulioniené J. Smart, Semicond. Sci. Technol. 17, L9 (2002)
105. C. Bulutay, B.K. Ridley, N.A. Zakhleniuk, Phys. Rev. B 68, 115205 (2003)
106. R. Brazis, R. Raguotis, Appl. Phys. Lett. 85, 609 (2004)
107. A.A.P. Silva, V.A. Nascimento, J. Lumin. 106, 253 (2004)
108. S. Gökden, Physica E 23, 198 (2004)
109. B.K. Ridley, W.J. Schaff, L.F. Eastman, J. Appl. Phys. 96, 1499 (2004)
110. A. Matulionis, J. Liberis, IEE Proc. - Circ., Dev., and Syst. 151, 148 (2004)
111. M. Ramonas, A. Matulionis, J. Liberis, L. Eastman, X. Chen, Y.-J. Sun, Phys. Rev. B 71, 075324 (2005)
112. J.M. Barker, D.K. Ferry, S.M. Goodnick, D.D. Koleske, A. Allerman, R.J. Shul, Phys. Status Solidi C 2, 2564 (2005)
113. L. Ardaravičius, M. Ramonas, O. Kiprijanovic, J. Liberis, A. Matulionis, L.F. Eastman, J.R. Shealy, X. Chen, Y.J. Sun, Phys. Status Solidi A 202, 808 (2005)
114. Y. Chang, K. Y. Tong, C. Surya, Semicond. Sci. Technol. 20, 188 (2005)
115. S. Yamakawa, S.M. Goodnick, J. Branlard, M. Saraniti, Phys. Status Solidi C 2, 2573 (2005)
116. A. Reklaitis, L. Reggiani, J. Appl. Phys. 97, 043709 (2005)
117. T.V. Shubina, S.V. Ivanov, V.N. Jmerik, M.M. Glazov, A.P. Kalvarskii, M.G. Tkachman, A. Vasson, J. Leymarie, A. Kavokin, H. Amano, I. Akasaki, K.S.A. Butcher, Q. Guo, B. Monemar, P.S. Kop'ev, Phys. Status Solidi A 202, 377 (2005)
118. R.M. Yorston, J. Comput. Phys. 64, 177 (1986)