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Volumn 36, Issue 6, 1997, Pages
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GaN thin film growth on LiGaO2 substrate with a multi-domain structure
a
a
NTT CORPORATION
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL LATTICES;
CRYSTALLINE MATERIALS;
EPITAXIAL GROWTH;
ETCHING;
FILM GROWTH;
LITHIUM COMPOUNDS;
MORPHOLOGY;
NITRIC ACID;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTOR GROWTH;
SUBSTRATES;
THIN FILMS;
GALLIUM NITRIDE;
LATTICE MATCHING;
SEMICONDUCTING FILMS;
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EID: 0031153390
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.36.l746 Document Type: Article |
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Times cited : (30)
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References (10)
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