The Chemistry of Sapphire Nitridation in Relation to the GaN Structural Quality: Why Low Temperature 200°C Nitridation?

Physica Status Solidi (A) Applied Research

Volumn 188, Issue 2, 2001, Pages 561-565

  Losurdo, M ^a   Capezzuto, P ^a   Bruno, G ^a   Namkoong, G ^b   Doouttle, W A ^b   Brown, A S ^b  

^a CNR   (Italy)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0012714267     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200112)188:2<561::AID-PSSA561>3.0.CO;2-J     Document Type: Article

References (5)

1. Proc. 3rd Internat. Conf. Nitride Semiconductors, Montpellier (France), July 5-9, 1999, phys. stat. sol. (b) 216, No. 1 (1999); phys. stat, sol. (a) 176, No. 1 (1999), and references therein.
2. Proc. 3rd Internat. Conf. Nitride Semiconductors, Montpellier (France), July 5-9, 1999, phys. stat. sol. (b) 216, No. 1 (1999); phys. stat, sol. (a) 176, No. 1 (1999), and references therein.
3. GON NAMKOONG, W. ALAN DOOLITTLE, SANGBEOM KANG, SA HUANG, A. S. BROWN, and S. R. STOCK, MRS Internet J. Nitride Semicond. Res. 5, 10 (2000).
4. H. G. TOMPKINS, A User's Guide to Ellipsometry, Academic Press, Inc., London/New York 1993 (pp. 246-251).
5. M. LOSURDO, P. CAPEZZUTO, and G. BRUNO, J. Appl. Phys. 88, 2138 (2000), and references therein.