Direct evidence of the recombination of silicon interstitial atoms at the silicon surface

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 216, Issue 1-4, 2004, Pages 281-285

  Lamrani, Y ^a   Cristiano, F ^a   Colombeau, B ^b   Scheid, E ^a   Calvo, P ^a   Schafer H ^c   Claverie, Alain ^a  

^a LAAS CNRS   (France)

^b UNIVERSITY OF SURREY   (United Kingdom)

^c INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Extended defects; Interstitials; Ion implantation; Transient enhanced diffusion

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; DIFFUSION IN SOLIDS; EPITAXIAL GROWTH; ION IMPLANTATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SUPERSATURATION; TRANSMISSION ELECTRON MICROSCOPY;

EXTENDED DEFECTS; INTERSTITIALS; TRANSIENT ENHANCED DIFFUSION;

SILICON WAFERS;

EID: 1042265819     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2003.11.047     Document Type: Conference Paper

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