Improvement of Threshold Voltage Roll-off by Ultra-shallow Junction Formed by Flash Lamp Annealing

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2003, Pages 53-54

  Ito, T ^a   Suguro, K ^a   Itani, T ^a   Nishinohara, K ^a   Matsuo, K ^a   Saito, T ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CMOS INTEGRATED CIRCUITS; FLASHLIGHTS; ION IMPLANTATION; MOSFET DEVICES; OPTIMIZATION; THRESHOLD VOLTAGE; CHEMICAL ACTIVATION;

ULTRA-SHALLOW JUNCTIONS;

SEMICONDUCTOR JUNCTIONS; MOSFET DEVICES;

ACTIVATION ANNEALING; ANNEALING CONDITION; FLASH LAMP ANNEALING; IMPURITIES IN; ION ACTIVATION; IONS IMPLANTATION; MOSFETS; SOURCE AND DRAINS; THRESHOLD VOLTAGE ROLL-OFF; ULTRA SHALLOW JUNCTION;

EID: 0141761567     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. T. Yamaraoto et al., Symposium on VLSI Technology Digest of Technical Papers, pp, Hawaii, 2002.
2. T. Ito et al., Ext. Abstr. of SSDM, pp 182-183, Tokyo, 2001.
3. T. Ito et al., Jpn. J. Appl. Phys. vol. 41, pp 2394-2398, April 2002.
4. T. Ito et al., Ext. Abstr. of ISSM, pp19-22, Tokyo, 2002.
5. T. Ito et al., Ext. Abstr. of IWJT, pp23-26, Tokyo, 2002.