Defects evolution and dopant activation anomalies in ion implanted silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 253, Issue 1-2, 2006, Pages 68-79

  Cristiano, F ^a   Lamrani, Y ^a   Severac, F ^a   Gavelle, M ^a   Boninelli, S ^b   Cherkashin, N ^b   Marcelot, O ^b   Claverie, A ^b   Lerch, W ^c   Paul, S ^c   Cowern, N ^d  

^a LAAS CNRS   (France)

^b CEMES CNRS   (France)

^c Mattson Thermal Products GmbH   (Germany)

^d UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

Extended defects; Ion implantation; Transmission electron microscopy; Ultra shallow junctions

Indexed keywords

DIFFUSION; DOPING (ADDITIVES); ION IMPLANTATION; SEMICONDUCTOR JUNCTIONS; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

ACTIVATION ANOMALIES; EXTENDED DEFECTS; IMPLANTED DOPANTS; ULTRA-SHALLOW JUNCTIONS;

DEFECTS;

EID: 33751312076     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.10.046     Document Type: Article

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