Simulation of rapid thermal annealed boron ultra-shallow junctions in inert and oxidizing ambient

Materials Research Society Symposium - Proceedings

Volumn 525, Issue , 1998, Pages 237-255

  Lerch, W ^a   Glueck, M ^a   Stolwijk, N A ^a   Walk, H ^a   Schaefer, M ^a   Marcus, S D ^a   Downey, D F ^a   Chow, J W ^a   Marquardt, H ^a  

^a STEAG AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; ION IMPLANTATION; MATHEMATICAL MODELS; NITROGEN; OXYGEN; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING BORON; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS; SUPERSATURATION;

CONCENTRATION-DEPTH PROFILES; ULTRASHALLOW JUNCTIONS;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0031627819     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-525-237     Document Type: Conference Paper

References (47)