Boron ultrashallow junction formation in silicon by low-energy implantation and rapid thermal annealing in inert and oxidizing ambient

Journal of the Electrochemical Society

Volumn 146, Issue 7, 1999, Pages 2670-2678

  Lerch, W ^a   Gluck M ^a   Stolwijk, N A ^b   Walk, H ^a,c   Schafer M ^c   Marcus, S D ^d   Downey, D F ^c   Chow, J W ^e  

^a STEAG AG   (Germany)

^b UNIVERSITY OF MÜNSTER   (Germany)

^c CADwalk   (Germany)

^d STEAG AST Elektronik   (United States)

^e VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; DIFFUSION IN SOLIDS; FERMI LEVEL; ION IMPLANTATION; NITROGEN; OXIDATION; OXYGEN; POINT DEFECTS; RAPID THERMAL ANNEALING; SEMICONDUCTOR JUNCTIONS; SUPERSATURATION; THERMAL EFFECTS;

ULTRASHALLOW JUNCTIONS;

SILICON WAFERS;

EID: 0345148841     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1391990     Document Type: Article

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