Crystal damage removal by spike And flash annealing

ECS Transactions

Volumn 3, Issue 2, 2006, Pages 77-84

  Lerch, W ^a   Paul, S ^a   Niess, J ^a   McCoy, S ^b   Gelpey, J ^b   Cristiano, F ^c   Boninelli, S ^d   Marcelot, O ^d   Fazzini, P F ^d   Duffy, R ^e  

^a MATTSON THERMAL PRODUCTS GMBH   (United States)

^b Mattson Technology Canada Inc   (Canada)

^c LAAS CNRS   (France)

^d CEMES CNRS   (France)

^e PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIFFUSION; DOPING (ADDITIVES); PRECIPITATION (CHEMICAL); SEMICONDUCTOR JUNCTIONS; TRANSMISSION ELECTRON MICROSCOPY;

DOPANT ACTIVATION; INTERSTITIALS; SPIKE; ULTRA-SHALLOW JUNCTIONS; VACANCIES;

CRYSTAL DEFECTS;

EID: 33846963759     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2356266     Document Type: Conference Paper

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