Automated dose and dopant level monitoring by SIMS

AIP Conference Proceedings

Volumn 866, Issue , 2006, Pages 594-598

  Maul, Hans ^a   Loibl, Norbert ^a   Ehrke, Ulrich ^a   Merkulov, Alex ^a   Peres, Paula ^a   Schuhmacher, Michel ^a  

^a CAMECA   (United States)

Author keywords

As; B; Depth profiling; Dopant; Dose; Implant; P; Semiconductor; Si; SiGe; SIMS; Wafer

Indexed keywords

EID: 33847002336     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.2401588     Document Type: Conference Paper

References (2)

1. J.L. Maul, U. Ehrke, N. Loibl and C. Schnuerer-Patschan, Proc. SIMS XV, to be published
2. U. Ehrke, A. Sears, W. Lerch, S. Paul, G. Roters, D.F. Downey, E.A. Arevalo, J. Vac. Sci. Technol. B 22(1) (2004) p346