On the properties of the intrinsic point defects in silicon: A perspective from crystal growth and wafer processing

Physica Status Solidi (B) Basic Research

Volumn 222, Issue 1, 2000, Pages 219-244

  Falster, R ^a   Voronkov, V V ^b   Quast, F ^c  

^a MEMC Electronic Materials SpA   (Italy)

^b MEMC Electronic Materials SpA   (Italy)

^c Fraunhofer Inst Integrierte SB   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0034336203     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(200011)222:1<219::AID-PSSB219>3.0.CO;2-U     Document Type: Article

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