On a computationally efficient approach to boron-interstitial clustering

Solid-State Electronics

Volumn 52, Issue 9, 2008, Pages 1424-1429

  Schermer, J ^a   Martinez Limia, A ^a   Pichler, P ^a,b   Zechner, C ^c   Lerch, W ^d   Paul, S ^d  

^a FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^c SYNOPSYS SWITZERLAND LLC   (Switzerland)

^d MATTSON THERMAL PRODUCTS GMBH   (United States)

Author keywords

Activation; BICs; Boron; Boron interstitial clusters; Clustering; Diffusion; Silicon

Indexed keywords

BORON; BORON COMPOUNDS; CHLORINE COMPOUNDS; NONMETALS;

ACTIVATION; ANNEALING CONDITIONS; BICS; BORON ATOMS; BORON-INTERSTITIAL CLUSTERS; CLUSTERING; COMPUTATIONALLY EFFICIENT; DIFFUSION; DOPANT ACTIVATION; INTERSTITIALS; MULTI-DIMENSIONAL SIMULATIONS; PHYSICAL CONCEPTS; POST-IMPLANTATION ANNEALING; SILICON; TCAD SOFTWARE;

ANNEALING;

EID: 50349102073     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.04.026     Document Type: Article

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