Flash memory scaling: From material selection to performance improvement

Materials Research Society Symposium Proceedings

Volumn 1071, Issue , 2008, Pages 3-15

  Hou, Tuo Hung ^a   Lee, Jaegoo ^a   Shaw, Jonathan T ^a   Kan, Edwin C ^a  

^a School of Operations Research and Industrial Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

QUANTUM CHEMISTRY; STATIC RANDOM ACCESS STORAGE;

65-NM TECHNOLOGIES; CYCLING ENDURANCE; FLASH MEMORY SCALING; FUNCTIONAL DENSITY; HETEROGENEOUS INTEGRATION; MATERIAL SELECTION; QUANTUM TRANSPORT; SYSTEM INTERFACES;

FLASH MEMORY;

EID: 55849125777     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-1071-f02-01     Document Type: Conference Paper

References (73)

1. K. Lim, and J. Choi, in Proc. Non-Volatile Semiconductor Memory Workshop, 2006, p. 9.
2. K. Kinam, J.-H. Choi, J. Choi, and H.-S. Jeong, in Proc. VLSI Technology (VLSI-TSA-Tech), 2005, p. 88.
3. R. Bez, and P. Cappelletti, in Proc. VLSI Technology (VLSI-TSA-Tech), 2005, p. 84.
4. G. Atwood, IEEE Trans. Device and Materials Reliability, vol. 4, pp. 301, 2004.
5. International Technology Roadmap for Semiconductors, 2005 edition, [Online]. Available: http://public.itrs.net/
6. H. Pon, in Proc. Int. Solid-State and Integrated Circuit Technology, 2006, p. 697.
7. J.-H. Kim et al., in IEDM Tech. Dig., 2006, p. 45.
8. S. Tehrani, in IEDM Tech. Dig., 2006, p. 585.
9. J. H. Oh et al., in IEDM Tech. Dig., 2006, p. 49.
10. Y. Shin, in Proc. VLSI Circ. Dig., 2005, p. 156.
11. L. Geppert, IEEE Spectrum, vol. 40, p. 48, 2003.
12. N. Flaherty, IEE Review, vol. 49, pp. 50, 2003.
13. M. Noguchi et al., in IEDM Tech. Dig., 2007, p. 445.
14. B. DeSalvo et al., IEEE Trans. Device Mater. Rel., vol. 4, p. 377, 2004.
15. H. A. R. Wegener et al., in IEDM Tech. Dig., 1967, p. 70.
16. C. T. Swift et al., in IEDM Tech. Dig., 2002, p. 927.
17. H.-T. Lue et al., in IEDM Tech. Dig., 2005, p. 547.
18. Y. Park et al., in IEDM Tech. Dig., 2006, p. 29.
19. R. Ohba, Y. Mitani, N. Sugiyama, and S. Fujita, in IEDM Tech. Dig., 2007, p. 75.
20. T. Sugizaki, et al., in Symp. VLSI Tech., 2003, p. 27.
21. Y. Tan, W. Chim, W. Choi, M. Joo, T. Ng, and B. Cho, in IEDM Tech. Dig., 2004, p. 889.
22. Y.-H. Lin, C.-H Chien, C.-T. Lin, C.-W. Chen, C.-Y. Chang, and T.-F. Lei, in IEDM Tech. Dig., 2004, p. 1080.
23. C. H. Lai, et al., in Symp. VLSI Tech., 2005, p. 210.
24. Y. Q. Wang et al., in IEDM Tech. Dig., 2006, p. 971.
25. X. Wang, J. Liu, W. Bai, and D.-L. Kwong, IEEE Trans. Electron Devices, vol. 51, p. 597, 2005.
26. S. Tiwari, F. Rana, K. Chan, H. Hanafi, W. Chan, and D. Buchanan, in IEDM Tech. Dig., 1995, p. 521.
27. R. Muralidhar et al., in IEDM Tech. Dig., 2003, p. 601.
28. B. De Salvo et al., in IEDM Tech. Dig., 2003, p. 597.
29. S. Baik, S. Choi, U. I. Chung, and J. T. Moon, in IEDM Tech. Dig., 2003, p. 545.
30. J. H. Chen et al., IEEE Trans. Electron Devices, vol. 51, p. 1840, 2004.
31. T. H. Hou, U. Ganguly, and E. C. Kan, Appl. Phys. Lett., vol. 89, 253113, 2006.
32. Z. Liu, C. Lee, V. Narayanan, G. Pei, and E. C. Kan, IEEE Trans. Electron Devices, vol. 49, p. 1606, 2002.
33. C. Lee, A. Gorur-Seetharam, and Edwin C. Kan, in IEDM Tech. Dig., 2003, p. 557.
34. C. Lee, J. Meteer, V. Narayanan, and E. C. Kan, J. Electronic Materials, vol. 34, p. 1, 2005.
35. J. J. Lee, and D.-L. Kwong, IEEE Trans. Electron Devices, vol. 52, p. 507, 2005.
36. P. H. Yeh et al., J. Vac. Sci. Technol. A, vol. 23, p. 851, 2005.
37. Y. Zhu, D. Zhao, R. Li, and J. Liu, Appl. Phys. Lett., 88, 103507, 2006.
38. X. B. Lu and J. Y. Dai, Appl. Phys. Lett., 88, 113104, 2006.
39. R. Ohba, N. Sugiyama, K. Uchida, J. Koga, and A. Toriumi, IEEE Trans. Electron Devices, vol. 49, p. 1392, 2002.
40. M. Takata et al., in IEDM Tech. Dig., 2003, p. 553.
41. S. Tang, C. Mao, Y. Liu, D. Q. Kelly, and S. K. Banerjee, in IEDM Tech. Dig., 2005, p. 181.
42. K. W. Guarini, C. T. Black, Y. Zhang, I. V. Babich, E. M. Sikorski, and L. M. Gignac, in IEDM Tech. Dig., 2003, p. 541.
43. C.N.R. Rao, G. U. Kulkarni, P. J. Thomas, and P. P. Edwards, Chem. Eur. J., vol. 8, p. 29, 2002.
44. M. She, and T.-J. King, IEEE Trans. Electron Devices, vol. 50, p. 1934, 2003.
45. Y. Liu, S. Tang, and S. K. Banerjee, Appl. Phys. Lett., 88, 213504, 2006.
46. Y. Yang, and M. H. White, Solid-state Electron., vol. 44, p. 949, 2000.
47. C. Lee, U. Ganguly, V. Narayanan, T.-H. Hou, and E. C. Kan, IEEE Electron Device Lett., vol. 26, p. 879, 2005.
48. T.-H Hou, C. Lee, V. Narayanan, U. Ganguly, and E. C. Kan, IEEE Trans. Electron Devices, vol. 53, p. 3095, 2006.
49. T.-H Hou, C. Lee, V. Narayanan, U. Ganguly, and E. C. Kan, IEEE Trans. Electron Devices, vol. 53, p. 3103, 2006.
50. T. H. Hou, C. Lee, and E. C. Kan, in Device Research Conf. Dig. 2007, p.221.
51. L. Perniola et al., IEEE Trans. Nanotechnol., vol. 2, p. 277, 2003.
52. R. Gusmeroli, C. M. Compagnonia and A. S. Spinellia, Microelectronic Eng., vol. 84, p. 2869, 2007.
53. S. Huang, K. Arai, K. Usami, and S. Oda, IEEE Trans. Nanotech., vol. 3, p. 210, 2005.
54. C. Lee, T-H Hou, and E. Kan, IEEE Trans. Electron Devices, vol. 52, p. 2697, 2005.
55. N. Yang, W. K. Henson, J. R. Hauser, and J. J. Wortman, IEEE Trans. Electron Devices, vol. 46, p. 1464, 1999.
56. K. K. Likharev, Appl. Phys. Lett. vol. 73, p. 2137, 1998.
57. P. Blomme, B. Govoreanu, M. Rosmeulen, J. Van Houdt, and K. DeMeyer, IEEE Electron Device Lett., vol. 24, p. 99, 2003.
58. C. M. Compagnoni, D. Ielmini, A. S. Spinelli, and A. L. Lacaita, IEEE Trans. Electron Devices, vol. 52, p. 2473, 2005.
59. M. V. Fischetti, D. A. Neumayer, and E. A. Cartier, J. Appl. Phys., vol. 90, p. 4587, 2001.
60. K. Mistry et. al, in IEDM Tech. Dig., 2007, p. 247.
61. W.-H. Lee, J. T. Clemens, R. C. Keller, and L. Manchanda, in Symp. VLSI Tech. Dig., 1997, p. 117.
62. C. H. Lee, K. I. Choi, M. K. Cho, Y. H. Song, K. C. Park, and K. Kim, in IEDM Tech. Dig., 2003, p. 613.
63. J. Robertson, J. Vac. Sci. Technol. B, vol. 18, p. 1785, 2000.
64. T. H. Hou, U. Ganguly, and E. C. Kan, IEEE Electron Device Letters, vol. 28, p.103, 2007.
65. D. Burnett, D. Shum, and K. Baker, in IEDM Tech. Dig., 1998, p. 983.
66. P. Xuan, M. She, B. Harteneck, A. Liddle, J. Bokor, and T.-J. King, in IEDM Tech. Dig., 2003, p. 609.
67. H. Silva, M.K. Kim, A. Kumar, U. Avci, S. Tiwari, in IEDM Tech. Dig., 2003, p. 271.
68. S.-M. Jung et al., in IEDM Tech. Dig., 2006, p. 37.
69. E.-K. Lai et al., in IEDM Tech. Dig., 2006, p. 41.
70. Y. Fukuzumi et al., in IEDM Tech. Dig., 2007, p. 449.
71. M. Saitoh, E. Nagata and T. Hiramoto, Appl. Phys. Lett., vol. 82, p. 1787, 2003.
72. U. Ganguly, E. C. Kan and Y. Zhang, Appl. Phys. Lett., vol. 87, 43108, 2005.
73. U. Ganguly, C. Lee, T. H. Hou, and E. C. Kan, IEEE Trans. Nanotech., vol. 6, p. 22, 2007.