Asymmetric electric field enhancement in nanocrystal memories

IEEE Electron Device Letters

Volumn 26, Issue 12, 2005, Pages 879-881

  Lee, Chungho ^a   Ganguly, Udayan ^b   Narayanan, Venkat ^b   Hou, Tuo Hung ^b   Kim, Jinsook ^b   Kan, Edwin C ^b  

^a Submicron Development Center   (United States)

^b School of Operations Research and Industrial Engineering   (United States)

Author keywords

Electric field enhancement; Electrostatics; Nanocrystal; Nonvolatile memories

Indexed keywords

COMPUTER SIMULATION; ELECTRIC FIELDS; ELECTRON TRAPS; ELECTROSTATICS; NANOSTRUCTURED MATERIALS; NONVOLATILE STORAGE; PERMITTIVITY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS;

ELECTRIC FIELD ENHANCEMENT; ELECTROSTATIC MODEL; NANOCRYSTAL MEMORIES; SEMICONDUCTOR NANOCRYSTAL; TRAP-BASED MEMORIES;

SEMICONDUCTOR STORAGE;

EID: 29244455661     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.859634     Document Type: Article

References (11)

1. Tiwari, F. Rana, H. Hanafi, A. Hartstein, E. F. Crabbe, and K. Chan, "A silicon nanocrystals based memory," Appl. Phys. Lett., vol. 68, no. 10, pp. 1377-1379, Mar. 1996.
2. C. Lee, J. Meteer, V. Narayanan, and E. C. Kan, "Self-assembly of metal nanocrystals on ultrathin oxide for nonvolatile memory applications," J. Elect. Mat., vol. 34, no. 1, pp. 1-11, 2005.
3. C. Lee, A. Gorur-Seetharam, and E. C. Kan, "Operational and reliability comparison of discrete-storage nonvolatile memories: Advantages of single- and double-layer metal nanocrystals," in IEDM Tech. Dig., 2003, pp. 557-560.
4. J. M. Crowley, Fundamentals of Applied Electrostatics. New York: Wiley, 1986.
5. W. R. Smythe, Static and Dynamic Electricity, 3rd ed. New York: McGraw-Hill, 1968.
6. Y. A. Godin and A. S. Zil'bergleit, "Axisymmetric electrostatic problem of a dielectric sphere near a conducting plane," Sov. Phys. Tech. Phys., vol. 31, no. 6, pp. 632-637, 1986. (translated by Amer. Inst. Phys., 1987).
7. Y. A. Godin, "Electrostatic problem of a conducting sphere in the field of a plane capacitor," Sov. Phys. Tech. Phys., vol. 33, no. 6, pp. 720-722, 1988. (translated by Amer. Inst. Phys., 1989).
8. J. J. Lee and D. L. Kwong, "Metal nanocrystal memory with high-k tunneling barrier for improved data retention," IEEE Trans. Electtron Devices, vol. 52, no. 4, pp. 507-511, Apr. 2005.
9. J. H. Chen, Y. Q. Wang, W. J. Yoo, Y. Yeo, G. Samudra, D. S. H. Chan, A. Y. Du, and D. L. Kwong, "Nonvolatile flash memory device using Ge nanocrystals embedded in HfAlO high-k tunneling and control oxides: Device fabrication and electrical performance," IEEE Trans. Electtron Devices, vol. 51, no. 11, pp. 1840-1848, 2004.
10. Maxwell 3-D Software for Electromagnetic Field Simulation, Ansoft Corp., 2003.
11. M. She and T. King, "Impact of crystal size and tunnel dielectric on semiconductor nanocrystal memory performance," IEEE Trans. Electron Devices, vol. 50, no. 9, pp. 1934-1940, Sep. 2003.