Low voltage, scalable nanocrystal FLASH memory fabricated by templated self assembly

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 541-544

  Guarini, K W ^a   Black, C T ^a   Zhang, Y ^a   Babich, I V ^a   Sikorski, E M ^a   Gignac, L M ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AEROSOLS; ANNEALING; CAPACITANCE; CHEMICAL VAPOR DEPOSITION; CRYSTALS; DIFFUSION; HYSTERESIS; LITHOGRAPHY; MOLECULAR WEIGHT; NANOSTRUCTURED MATERIALS; POLYSTYRENES; SELF ASSEMBLY; SILICON;

INTRINSIC MOLECULAR LENGTHS SCALES; SCALABILITY; VOLTAGE MEMORY OPERATION;

FLASH MEMORY;

EID: 0842288221     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. See: S. Tiwari et al., APL 68, 1377 (1996). Y. C. King, et al. IEDM 155 (1998). I. Kim et al., IEEE EDL 20, 630 (1999). J. A. Wahl et al. IEDM 375 (1999). M. L. Ostraat et al. APL 79, 433 (2001).
2. See: S. Tiwari et al., APL 68, 1377 (1996). Y. C. King, et al. IEDM 155 (1998). I. Kim et al., IEEE EDL 20, 630 (1999). J. A. Wahl et al. IEDM 375 (1999). M. L. Ostraat et al. APL 79, 433 (2001).
3. See: S. Tiwari et al., APL 68, 1377 (1996). Y. C. King, et al. IEDM 155 (1998). I. Kim et al., IEEE EDL 20, 630 (1999). J. A. Wahl et al. IEDM 375 (1999). M. L. Ostraat et al. APL 79, 433 (2001).
4. See: S. Tiwari et al., APL 68, 1377 (1996). Y. C. King, et al. IEDM 155 (1998). I. Kim et al., IEEE EDL 20, 630 (1999). J. A. Wahl et al. IEDM 375 (1999). M. L. Ostraat et al. APL 79, 433 (2001).
5. See: S. Tiwari et al., APL 68, 1377 (1996). Y. C. King, et al. IEDM 155 (1998). I. Kim et al., IEEE EDL 20, 630 (1999). J. A. Wahl et al. IEDM 375 (1999). M. L. Ostraat et al. APL 79, 433 (2001).
6. T. Ishii et al., IEDM 305 (2000).
7. K. W. Guarini, C. T. Black, and S. Yeung, J. Adv. Mater. 14, 1290 (2002).
8. K. W. Guarini, C. T. Black, Y. Zhang, H. Kim, E. M. Sikorski, and I. V. Babich, J. Vac. Sci. Technol. B 20, 2788 (2002).