Carbon nanotube-based nonvolatile memory with charge storage in metal nanocrystals

Applied Physics Letters

Volumn 87, Issue 4, 2005, Pages

  Ganguly, Udayan ^a   Kan, Edwin C ^a,b   Zhang, Yuegang ^a  

^a INTEL CORPORATION   (United States)

^b School of Operations Research and Industrial Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BULK DEVICES; CHARGE STORAGE; DRAIN CURRENTS; NANOTUBE MEMORY DEVICES;

COULOMB BLOCKADE; DATA STORAGE EQUIPMENT; DIELECTRIC MATERIALS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; FIELD EFFECT TRANSISTORS; LEAKAGE CURRENTS; NANOSTRUCTURED MATERIALS; SEMICONDUCTOR MATERIALS;

CARBON NANOTUBES;

EID: 23744470204     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1999014     Document Type: Article

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