Tunnel oxide thickness dependence of activation energy for retention time in SiGe quantum dot flash memory

Applied Physics Letters

Volumn 88, Issue 21, 2006, Pages

  Liu, Yueran ^a   Tang, Shan ^a   Banerjee, Sanjay K ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION BAND; DEEP TRAP; FLOATING GATE; TUNNEL OXIDE;

ACTIVATION ENERGY; ELECTRON TRAPS; FLASH MEMORY; GERMANIUM COMPOUNDS; SILICON COMPOUNDS; THICKNESS MEASUREMENT;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33744506951     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2202749     Document Type: Article

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