Enhanced electrostatics for low-voltage operations in nanocrystal based nanotube/nanowire memories

IEEE Transactions on Nanotechnology

Volumn 6, Issue 1, 2007, Pages 22-28

  Ganguly, Udayan ^b,c   Lee, Chungho ^b,d   Hou, Tuo Hung ^b   Kan, Edwin Chihchuan ^a,b  

^a IEEE

^b Cornell University   (United States)

^c APPLIED MATERIALS INC   (United States)

^d Submicron Development Center   (United States)

Author keywords

Carbon nanotube (CNT); Electrically erasable programmable read only memory (EEPROM); Electrostatics; Field effect transistor; Nanocrystal (NC); Nonvolatile memories

Indexed keywords

CARBON NANOTUBES; ELECTRIC POTENTIAL; NANOSTRUCTURED MATERIALS; NONVOLATILE STORAGE; STATISTICAL METHODS;

ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY (EEPROM); NANOCRYSTAL (NC); OPERATING VOLTAGE; TUNNELING OXIDE;

ELECTROSTATICS;

EID: 33846582847     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2006.888529     Document Type: Article

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