Metal nanocrystal memory with high-κ tunneling barrier for improved data retention

IEEE Transactions on Electron Devices

Volumn 52, Issue 4, 2005, Pages 507-511

  Lee, Jong Jin ^a   Kwong, Dim Lee ^a  

^a The University of Texas at Austin   (United States)

Author keywords

Data endurance; Data retention; High dielectrics; Metal nanocrystal (NC) memory; Programming transient

Indexed keywords

CURRENT DENSITY; DIELECTRIC MATERIALS; ELECTRON TUNNELING; EMBEDDED SYSTEMS; NANOSTRUCTURED MATERIALS; NICKEL; PERMITTIVITY;

DATA ENDURANCE; DATA RETENTION; METAL NANOCRYSTAL MEMORY; PROGRAMMING TRANSIENT;

NONVOLATILE STORAGE;

EID: 17444382701     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.844793     Document Type: Article

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