Nonvolatile memory with a metal nanocrystal/nitride heterogeneous floating-gate

IEEE Transactions on Electron Devices

Volumn 52, Issue 12, 2005, Pages 2697-2702

  Lee, Chungho ^a   Hou, Tuo Hung ^b   Kan, Edwin Chih Chuan ^b  

^a Submicron Development Center   (United States)

^b School of Operations Research and Industrial Engineering   (United States)

Author keywords

Direct tunneling; Nanocrystal nitride heterogeneous floating gate; Nonvolatile memories

Indexed keywords

ELECTRON TRAPS; ELECTRON TUNNELING; GATES (TRANSISTOR); GOLD; NANOSTRUCTURED MATERIALS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SELF ASSEMBLY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR STORAGE; SILICON NITRIDE;

DIRECT TUNNELING; HETEROGENEOUS FLOATING-GATE; SHORT CHANNEL EFFECTS;

NONVOLATILE STORAGE;

EID: 29244472213     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.859615     Document Type: Article

References (18)

1. N. Flaherty, "Not in a flash," Inst. Electr. Eng. Rev., pp. 50-53, Dec. 2003.
2. S. Tiwari, F. Rana, K. Chan, H. Hanati, W. Chan, and D. Buchanan, "Volatile and nonvolatile memories in silicon with nano-crystal storage," in IEDM Tech. Dig., 1995, pp. 521-524.
3. R. Muralidhar, R. F. Steimle, M. Sadd, R. Rao, C. T. Swift, E. J. Prinz, J. Yater, L. Grieve, K. Harber, B. Hradsky, S. Straub, B. Acred, W. Paulson, W. Chen, L. Parker, S. G. H. Anderson, M. Rossow, T. Merchant, M. Pransky, T. Huynh, D. Hadad, K. Chang, and B. E. White, Jr, "A 6 V embedded 90 nm silicon nanocrystals nonvolatile memory," in IEDM Tech. Dig., 2003, pp. 601-604.
4. M. H. White, D. A. Adams, and J. Bu, "On the go with SONOS," IEEE Circuits Devices Mag., pp. 22-31, Jul. 2000.
5. 2Os with TaN metal gate for multigiga bit flash memories," in IEDM Tech. Dig., 2003, pp. 613-616.
6. R. F. Steimle, M. Sadd, R. Muralidhar, R. Rao, B. Hradsky, S. Straub, and B. E. White Jr., "Hybrid silicon nanocrystal silicon nitride dynamic random access memory," IEEE Trans. Nanotechnol., vol. 2, no. 4, pp. 335-340, Dec. 2003.
7. R. F. Steimle, R. A. Rao, B. Hradsky, R. Muralidhar, M. Sadd, M. Ramon, S. Straub, S. Bagchi, X. D. Wang, J. Hooker, and B. E. White Jr., "Hybrid silicon nanocrystal silicon nitride memory," in Proc. ICSSDM, 2003, pp. 848-849.
8. C. Lee, A. Gorur-Seetharam, and E. C. Kan, "Operational and reliability comparison of discrete-storage nonvolatile memories: advantages of single- and double-layer metal nanocrystals," in IEDM Tech. Dig., 2003, pp. 557-560.
9. S. Yamazaki, K. Hatakeyama, I. Kagawa, and Y. Yamashita, "Properties of nonvolatile semiconductor memories by using silicon clusters in the gate insulator," in IEDM Tech. Dig., 1973, pp. 355-358.
10. S. Yamazaki, "Metal-insulator-semiconductor structures," Ceram. Bull., vol. 64, no. 12, pp. 1585-1589, 1985.
11. C. Lee, J. Meteer, V. Narayanan, and E. C. Kan, "Self-assembly of metal nanocrystal on ultrathin oxide for nonvolatile memory applications," J. Electron. Mater, vol. 34, no. 1, pp. 1-11, Jan. 2005.
12. Y. Yang and M. H. White, "Charge retention of scaled SONOS nonvolatile memory devices at elevated temperatures," Solid State Electron., vol. 44, pp. 949-958, 2000.
13. M. H. White, Y. Yang, A. Purwar, and M. L. French, "A low voltage SONOS nonvolatile semiconductor memory technology," IEEE Trans. Comp. Packag., Manuf. Technol. B, vol. 20, no. 2, pp. 190-195, Jun. 1997.
14. J. M. Crowley, Fundamentals of Applied Electrostatics. New York: Wiley, 1986.
15. H. C. Wann and C. Hu, "High-endurance ultrathin tunnel oxide in MONOS device structure for dynamic memory application," IEEE Electron Device Lett., vol. 16, no. 11, pp. 491-493, Nov. 1995.
16. H. I. Hanafi, S. Tiwari, and I. Khan, "Fast and long retention-time nano-crystal memory," IEEE Trans. Electron Devices, vol. 43, no. 9, pp. 1553-1558, Sep. 1996.
17. C. Busseret, A. Souifi, T. Baron, G. Guillot, F. Martin, M. N. Semeria, and J. Gautier, "Discharge mechanisms modeling in LPCVD silicon nanocrystals using C-V and capacitance transient techniques," Superlatt. Microstruct., vol. 28, no. 5/6, pp. 493-500, 2000.
18. "Maxwell 3-D software for electromagnetic field simulation," Ansoft Corp., Pittsburgh, PA, 2003.