Large memory window and long charge-retention time in ultranarrow-channel silicon floating-dot memory

Applied Physics Letters

Volumn 82, Issue 11, 2003, Pages 1787-1789

  Saitoh, Masumi ^a   Nagata, Eiji ^a   Hiramoto, Toshiro ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ABSORPTION; FABRICATION; MOSFET DEVICES; NONLINEAR SYSTEMS; SCANNING ELECTRON MICROSCOPY; SILICON;

FLOATING-DOT MEMORY;

DATA STORAGE EQUIPMENT;

EID: 0037451308     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1562343     Document Type: Article

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