Volatile and non-volatile memories in silicon with nano-crystal storage

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1995, Pages 521-524

  Tiwari, Sandip ^a   Rana, Farhan ^a   Chan, Kevin ^a   Hanafi, Hussein ^a   Chan, Wei ^a   Buchanan, Doug ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC CURRENTS; ELECTRONS; GATES (TRANSISTOR); NANOSTRUCTURED MATERIALS; OXIDES; PERMITTIVITY; SEMICONDUCTING SILICON; SILICON ON INSULATOR TECHNOLOGY; THIN FILMS;

COULOMBIC EFFECTS; NANOCRYSTAL STORAGE; NONVOLATILE MEMORIES; THRESHOLD VOLTAGE; VOLATILE MEMORIES;

SEMICONDUCTOR STORAGE;

EID: 0029516376     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)